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Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors

  • Koji Aizawa
  • , Byung Eun Park
  • , Yoshihito Kawashima
  • , Kazuhiro Takahashi
  • , Hiroshi Ishiwara
  • Tokyo Institute of Technology

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

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