Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films

Joo Won Yoon; Shun Ichiro Ohmi; Byung Eun Park; Hiroshi Ishiwara

doi:10.1063/1.2970085

Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films

Joo Won Yoon, Shun Ichiro Ohmi, Byung Eun Park, Hiroshi Ishiwara

School of Electrical and Computer Engineering

Institute of Science Tokyo

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Oxygen plasma etching characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films are investigated. It was found in MFM (M: metal; F: ferroelectric) capacitors that plasma damage effects to the ferroelectric properties were insignificant when Au metal masks were used. On the contrary, C-V (capacitance versus voltage) characteristics were significantly degraded in plasma-etched MFIS (I: insulator; S: semiconductor) diodes. The origin of this phenomenon is speculated to be degradation of the Si O2 Si interface by energetic oxygen ions and then mixing of Kr gas to the oxygen plasma is attempted to decrease the plasma damage.

Original language	English
Article number	162904
Journal	Applied Physics Letters
Volume	93
Issue number	16
DOIs	https://doi.org/10.1063/1.2970085
State	Published - 2008

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title = "Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films",

abstract = "Oxygen plasma etching characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films are investigated. It was found in MFM (M: metal; F: ferroelectric) capacitors that plasma damage effects to the ferroelectric properties were insignificant when Au metal masks were used. On the contrary, C-V (capacitance versus voltage) characteristics were significantly degraded in plasma-etched MFIS (I: insulator; S: semiconductor) diodes. The origin of this phenomenon is speculated to be degradation of the Si O2 Si interface by energetic oxygen ions and then mixing of Kr gas to the oxygen plasma is attempted to decrease the plasma damage.",

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journal = "Applied Physics Letters",

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T1 - Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films

AU - Yoon, Joo Won

AU - Ohmi, Shun Ichiro

AU - Park, Byung Eun

AU - Ishiwara, Hiroshi

PY - 2008

Y1 - 2008

N2 - Oxygen plasma etching characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films are investigated. It was found in MFM (M: metal; F: ferroelectric) capacitors that plasma damage effects to the ferroelectric properties were insignificant when Au metal masks were used. On the contrary, C-V (capacitance versus voltage) characteristics were significantly degraded in plasma-etched MFIS (I: insulator; S: semiconductor) diodes. The origin of this phenomenon is speculated to be degradation of the Si O2 Si interface by energetic oxygen ions and then mixing of Kr gas to the oxygen plasma is attempted to decrease the plasma damage.

AB - Oxygen plasma etching characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films are investigated. It was found in MFM (M: metal; F: ferroelectric) capacitors that plasma damage effects to the ferroelectric properties were insignificant when Au metal masks were used. On the contrary, C-V (capacitance versus voltage) characteristics were significantly degraded in plasma-etched MFIS (I: insulator; S: semiconductor) diodes. The origin of this phenomenon is speculated to be degradation of the Si O2 Si interface by energetic oxygen ions and then mixing of Kr gas to the oxygen plasma is attempted to decrease the plasma damage.

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VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films

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