Impact of Sb Incorporation on MOVPE-Grown Bulk InGaAs(Sb)N Films for Solar Cell Application

Taewan Kim; Adam Wood; Honghyuk Kim; Youngjo Kim; Jaejin Lee; Mark Peterson; Yongkun Sin; Steven Moss; Thomas F. Kuech; Susan Babcock; Luke J. Mawst

doi:10.1109/JPHOTOV.2016.2598262

Impact of Sb Incorporation on MOVPE-Grown Bulk InGaAs(Sb)N Films for Solar Cell Application

Taewan Kim, Adam Wood, Honghyuk Kim, Youngjo Kim, Jaejin Lee, Mark Peterson, Yongkun Sin, Steven Moss, Thomas F. Kuech, Susan Babcock, Luke J. Mawst

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-Temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (~40 ns) than observed for the InGaAsSbN film (~26-27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm², a fill factor (FF) of 77.55 (74.29)%, and an efficiency of 8.57 (7.31)%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.

Original language	English
Pages (from-to)	1673-1677
Number of pages	5
Journal	IEEE Journal of Photovoltaics
Volume	6
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2016.2598262
State	Published - Nov 2016

Keywords

Dilute-nitride materials
III-V semiconductor materials
photovoltaic cells
thin-film devices

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/JPHOTOV.2016.2598262

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title = "Impact of Sb Incorporation on MOVPE-Grown Bulk InGaAs(Sb)N Films for Solar Cell Application",

abstract = "We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-Temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (~40 ns) than observed for the InGaAsSbN film (~26-27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm2, a fill factor (FF) of 77.55 (74.29)%, and an efficiency of 8.57 (7.31)%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.",

keywords = "Dilute-nitride materials, III-V semiconductor materials, photovoltaic cells, thin-film devices",

author = "Taewan Kim and Adam Wood and Honghyuk Kim and Youngjo Kim and Jaejin Lee and Mark Peterson and Yongkun Sin and Steven Moss and Kuech, {Thomas F.} and Susan Babcock and Mawst, {Luke J.}",

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language = "English",

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T1 - Impact of Sb Incorporation on MOVPE-Grown Bulk InGaAs(Sb)N Films for Solar Cell Application

AU - Kim, Taewan

AU - Wood, Adam

AU - Kim, Honghyuk

AU - Kim, Youngjo

AU - Lee, Jaejin

AU - Peterson, Mark

AU - Sin, Yongkun

AU - Moss, Steven

AU - Kuech, Thomas F.

AU - Babcock, Susan

AU - Mawst, Luke J.

PY - 2016/11

Y1 - 2016/11

N2 - We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-Temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (~40 ns) than observed for the InGaAsSbN film (~26-27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm2, a fill factor (FF) of 77.55 (74.29)%, and an efficiency of 8.57 (7.31)%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.

AB - We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-Temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (~40 ns) than observed for the InGaAsSbN film (~26-27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm2, a fill factor (FF) of 77.55 (74.29)%, and an efficiency of 8.57 (7.31)%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.

KW - Dilute-nitride materials

KW - III-V semiconductor materials

KW - photovoltaic cells

KW - thin-film devices

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JO - IEEE Journal of Photovoltaics

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ER -

Impact of Sb Incorporation on MOVPE-Grown Bulk InGaAs(Sb)N Films for Solar Cell Application

Abstract

Keywords

UN SDGs

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