Impact of Sb Incorporation on MOVPE-Grown Bulk InGaAs(Sb)N Films for Solar Cell Application

Taewan Kim; Adam Wood; Honghyuk Kim; Youngjo Kim; Jaejin Lee; Mark Peterson; Yongkun Sin; Steven Moss; Thomas F. Kuech; Susan Babcock; Luke J. Mawst

doi:10.1109/JPHOTOV.2016.2598262

Impact of Sb Incorporation on MOVPE-Grown Bulk InGaAs(Sb)N Films for Solar Cell Application

Taewan Kim
, Adam Wood
, Honghyuk Kim
, Youngjo Kim
, Jaejin Lee
, Mark Peterson
, Yongkun Sin
, Steven Moss
, Thomas F. Kuech
, Susan Babcock
, Luke J. Mawst

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-Temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (~40 ns) than observed for the InGaAsSbN film (~26-27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm², a fill factor (FF) of 77.55 (74.29)%, and an efficiency of 8.57 (7.31)%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.

Original language	English
Pages (from-to)	1673-1677
Number of pages	5
Journal	IEEE Journal of Photovoltaics
Volume	6
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2016.2598262
State	Published - Nov 2016

Keywords

Dilute-nitride materials
III-V semiconductor materials
photovoltaic cells
thin-film devices

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/JPHOTOV.2016.2598262

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@article{7dfd739a0b5040cdb0916eb8113a79af,

title = "Impact of Sb Incorporation on MOVPE-Grown Bulk InGaAs(Sb)N Films for Solar Cell Application",

abstract = "We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-Temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (\textasciitilde{}40 ns) than observed for the InGaAsSbN film (\textasciitilde{}26-27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm2, a fill factor (FF) of 77.55 (74.29)\%, and an efficiency of 8.57 (7.31)\%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.",

keywords = "Dilute-nitride materials, III-V semiconductor materials, photovoltaic cells, thin-film devices",

author = "Taewan Kim and Adam Wood and Honghyuk Kim and Youngjo Kim and Jaejin Lee and Mark Peterson and Yongkun Sin and Steven Moss and Kuech, \{Thomas F.\} and Susan Babcock and Mawst, \{Luke J.\}",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2016",

month = nov,

doi = "10.1109/JPHOTOV.2016.2598262",

language = "English",

volume = "6",

pages = "1673--1677",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

number = "6",

}

TY - JOUR

T1 - Impact of Sb Incorporation on MOVPE-Grown Bulk InGaAs(Sb)N Films for Solar Cell Application

AU - Kim, Taewan

AU - Wood, Adam

AU - Kim, Honghyuk

AU - Kim, Youngjo

AU - Lee, Jaejin

AU - Peterson, Mark

AU - Sin, Yongkun

AU - Moss, Steven

AU - Kuech, Thomas F.

AU - Babcock, Susan

AU - Mawst, Luke J.

PY - 2016/11

Y1 - 2016/11

N2 - We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-Temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (~40 ns) than observed for the InGaAsSbN film (~26-27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm2, a fill factor (FF) of 77.55 (74.29)%, and an efficiency of 8.57 (7.31)%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.

AB - We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-Temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (~40 ns) than observed for the InGaAsSbN film (~26-27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm2, a fill factor (FF) of 77.55 (74.29)%, and an efficiency of 8.57 (7.31)%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.

KW - Dilute-nitride materials

KW - III-V semiconductor materials

KW - photovoltaic cells

KW - thin-film devices

UR - https://www.scopus.com/pages/publications/85027561040

U2 - 10.1109/JPHOTOV.2016.2598262

DO - 10.1109/JPHOTOV.2016.2598262

M3 - Article

AN - SCOPUS:85027561040

SN - 2156-3381

VL - 6

SP - 1673

EP - 1677

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

ER -

Impact of Sb Incorporation on MOVPE-Grown Bulk InGaAs(Sb)N Films for Solar Cell Application

Abstract

Keywords

UN SDGs

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