Implementation of Boolean Logic Functions in Charge Trap Flash for In-Memory Computing

Jaehong Lee, Byung Gook Park, Yoon Kim

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


Theuse of nonvolatilearbitrary logic functions through emerging nonvolatile memory devices has been proposed to implement in-memory computing architecture. Here, in this paper, for the first time, we have proposed a nonvolatile stateful logic methodology based on a charge trap flash (CTF) memory device. Using multi-bit operation, functionally complete Boolean logic functions are experimentally demonstrated. The CTF devices exhibit perfect CMOS compatibility and excellent reliability as compared to other emerging memory devices. In addition, they do not require an additional select transistor,which leads to amore compact array configuration.Our CTF device and operation methodmay be a promising solution for the hardware implementation of non-von Neumann computing systems.

Original languageEnglish
Article number8760572
Pages (from-to)1358-1361
Number of pages4
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 2019


  • 3d flash memory
  • Charge trap flash (ctf)
  • In-memory computing
  • Sonos flash memory


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