Implicit continuous current-voltage model for surrounding-gate metal-oxide-semiconductor field-effect transistors including interface traps

Yun Seop Yu; Namki Cho; Sung Woo Hwang; Doyeol Ahn

doi:10.1109/TED.2011.2156412

Implicit continuous current-voltage model for surrounding-gate metal-oxide-semiconductor field-effect transistors including interface traps

Yun Seop Yu, Namki Cho, Sung Woo Hwang, Doyeol Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

An analytic and continuous direct-current model for cylindrical doped surrounding-gate metal-oxide-semiconductor field-effect transistors (SGMOSFETs) including interface-trap charges is presented. Based on the SGMOSFET model, which is valid from undoped to heavily doped channels, a general model for long-channel SGMOSFETs including interface-trap charges is derived. A comparison between the numerical simulations and analytic calculations showed that the proposed model is valid for all operating regions of SGMOSFETs including different interface-trap charges with several dimensions and doping densities.

Original language	English
Article number	5871314
Pages (from-to)	2520-2524
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	8
DOIs	https://doi.org/10.1109/TED.2011.2156412
State	Published - Aug 2011

Keywords

Interface trap
SPICE
surrounding-gate metal-oxide-semiconductor field-effect transistor (SGMOSFET)

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10.1109/TED.2011.2156412

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@article{13c858b54228482780de1faaf8f2675e,

title = "Implicit continuous current-voltage model for surrounding-gate metal-oxide-semiconductor field-effect transistors including interface traps",

abstract = "An analytic and continuous direct-current model for cylindrical doped surrounding-gate metal-oxide-semiconductor field-effect transistors (SGMOSFETs) including interface-trap charges is presented. Based on the SGMOSFET model, which is valid from undoped to heavily doped channels, a general model for long-channel SGMOSFETs including interface-trap charges is derived. A comparison between the numerical simulations and analytic calculations showed that the proposed model is valid for all operating regions of SGMOSFETs including different interface-trap charges with several dimensions and doping densities.",

keywords = "Interface trap, SPICE, surrounding-gate metal-oxide-semiconductor field-effect transistor (SGMOSFET)",

author = "Yu, {Yun Seop} and Namki Cho and Hwang, {Sung Woo} and Doyeol Ahn",

year = "2011",

month = aug,

doi = "10.1109/TED.2011.2156412",

language = "English",

volume = "58",

pages = "2520--2524",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Implicit continuous current-voltage model for surrounding-gate metal-oxide-semiconductor field-effect transistors including interface traps

AU - Yu, Yun Seop

AU - Cho, Namki

AU - Hwang, Sung Woo

AU - Ahn, Doyeol

PY - 2011/8

Y1 - 2011/8

N2 - An analytic and continuous direct-current model for cylindrical doped surrounding-gate metal-oxide-semiconductor field-effect transistors (SGMOSFETs) including interface-trap charges is presented. Based on the SGMOSFET model, which is valid from undoped to heavily doped channels, a general model for long-channel SGMOSFETs including interface-trap charges is derived. A comparison between the numerical simulations and analytic calculations showed that the proposed model is valid for all operating regions of SGMOSFETs including different interface-trap charges with several dimensions and doping densities.

AB - An analytic and continuous direct-current model for cylindrical doped surrounding-gate metal-oxide-semiconductor field-effect transistors (SGMOSFETs) including interface-trap charges is presented. Based on the SGMOSFET model, which is valid from undoped to heavily doped channels, a general model for long-channel SGMOSFETs including interface-trap charges is derived. A comparison between the numerical simulations and analytic calculations showed that the proposed model is valid for all operating regions of SGMOSFETs including different interface-trap charges with several dimensions and doping densities.

KW - Interface trap

KW - SPICE

KW - surrounding-gate metal-oxide-semiconductor field-effect transistor (SGMOSFET)

UR - http://www.scopus.com/inward/record.url?scp=79960847320&partnerID=8YFLogxK

U2 - 10.1109/TED.2011.2156412

DO - 10.1109/TED.2011.2156412

M3 - Article

AN - SCOPUS:79960847320

SN - 0018-9383

VL - 58

SP - 2520

EP - 2524

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

M1 - 5871314

ER -

Implicit continuous current-voltage model for surrounding-gate metal-oxide-semiconductor field-effect transistors including interface traps

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Keywords

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