Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

Yu Jin Hwang; Do Kyung Kim; Sang Hwa Jeon; Ziyuan Wang; Jaehoon Park; Sin Hyung Lee; Jaewon Jang; In Man Kang; Jin Hyuk Bae

doi:10.3390/nano12183097

Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

Yu Jin Hwang, Do Kyung Kim, Sang Hwa Jeon, Ziyuan Wang, Jaehoon Park, Sin Hyung Lee, Jaewon Jang, In Man Kang, Jin Hyuk Bae

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc–tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the ZTO semiconductor films. Note that SR was found to increase with increased annealing time. Due to the increased SR, the ratio of oxygen vacancies (V_O) increased from 21.5% to 38.2%. According to increased V_O, the mobility in the saturation region was exhibited by a sixfold increase from 0.38 to 2.41 cm² V⁻¹ s⁻¹. In addition, we found that the threshold voltage negatively shifted from 3.08 to −0.95 V. Regarding the issue of bias stability, according to increased SR, positive-bias stress of the ZTO TFTs was enhanced, compared with reverse features of negative-bias stress. Our understanding is expected to provide a basic way to improve the electrical characteristics and bias stability of rare-metal-free oxide semiconductor TFTs, which have not been sufficiently studied.

Original language	English
Article number	3097
Journal	Nanomaterials
Volume	12
Issue number	18
DOIs	https://doi.org/10.3390/nano12183097
State	Published - Sep 2022

Keywords

bias stability
electrical characteristics
solution process
structural relaxation
thin-film transistor
zinc–tin oxide

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@article{34e8d08a0a1d4112b4d89078109a6755,

title = "Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors",

abstract = "Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc–tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the ZTO semiconductor films. Note that SR was found to increase with increased annealing time. Due to the increased SR, the ratio of oxygen vacancies (VO) increased from 21.5% to 38.2%. According to increased VO, the mobility in the saturation region was exhibited by a sixfold increase from 0.38 to 2.41 cm2 V−1 s−1. In addition, we found that the threshold voltage negatively shifted from 3.08 to −0.95 V. Regarding the issue of bias stability, according to increased SR, positive-bias stress of the ZTO TFTs was enhanced, compared with reverse features of negative-bias stress. Our understanding is expected to provide a basic way to improve the electrical characteristics and bias stability of rare-metal-free oxide semiconductor TFTs, which have not been sufficiently studied.",

keywords = "bias stability, electrical characteristics, solution process, structural relaxation, thin-film transistor, zinc–tin oxide",

author = "Hwang, {Yu Jin} and Kim, {Do Kyung} and Jeon, {Sang Hwa} and Ziyuan Wang and Jaehoon Park and Lee, {Sin Hyung} and Jaewon Jang and Kang, {In Man} and Bae, {Jin Hyuk}",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

month = sep,

doi = "10.3390/nano12183097",

language = "English",

volume = "12",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

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TY - JOUR

T1 - Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

AU - Hwang, Yu Jin

AU - Kim, Do Kyung

AU - Jeon, Sang Hwa

AU - Wang, Ziyuan

AU - Park, Jaehoon

AU - Lee, Sin Hyung

AU - Jang, Jaewon

AU - Kang, In Man

AU - Bae, Jin Hyuk

PY - 2022/9

Y1 - 2022/9

N2 - Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc–tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the ZTO semiconductor films. Note that SR was found to increase with increased annealing time. Due to the increased SR, the ratio of oxygen vacancies (VO) increased from 21.5% to 38.2%. According to increased VO, the mobility in the saturation region was exhibited by a sixfold increase from 0.38 to 2.41 cm2 V−1 s−1. In addition, we found that the threshold voltage negatively shifted from 3.08 to −0.95 V. Regarding the issue of bias stability, according to increased SR, positive-bias stress of the ZTO TFTs was enhanced, compared with reverse features of negative-bias stress. Our understanding is expected to provide a basic way to improve the electrical characteristics and bias stability of rare-metal-free oxide semiconductor TFTs, which have not been sufficiently studied.

AB - Effect of structural relaxation (SR) on the electrical characteristics and bias stability of solution-processed zinc–tin oxide (ZTO) thin-film transistors (TFTs) were systematically investigated by controlling the annealing time of the ZTO semiconductor films. Note that SR was found to increase with increased annealing time. Due to the increased SR, the ratio of oxygen vacancies (VO) increased from 21.5% to 38.2%. According to increased VO, the mobility in the saturation region was exhibited by a sixfold increase from 0.38 to 2.41 cm2 V−1 s−1. In addition, we found that the threshold voltage negatively shifted from 3.08 to −0.95 V. Regarding the issue of bias stability, according to increased SR, positive-bias stress of the ZTO TFTs was enhanced, compared with reverse features of negative-bias stress. Our understanding is expected to provide a basic way to improve the electrical characteristics and bias stability of rare-metal-free oxide semiconductor TFTs, which have not been sufficiently studied.

KW - bias stability

KW - electrical characteristics

KW - solution process

KW - structural relaxation

KW - thin-film transistor

KW - zinc–tin oxide

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U2 - 10.3390/nano12183097

DO - 10.3390/nano12183097

M3 - Article

AN - SCOPUS:85138704481

SN - 2079-4991

VL - 12

JO - Nanomaterials

JF - Nanomaterials

IS - 18

M1 - 3097

ER -

Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

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