Imprinting well-controlled closed-nanopores in spin-on polymeric dielectric thin films

The use of low dielectric constant (low-k) interdielectrics in multilevel structure integrated circuits (ICs) can lower line-to-line noise in interconnects and alleviate power dissipation issues by reducing the capacitance between the interconnect conductor lines. Because of these merits, low-k interdielectric materials are currently in high demand in the development of advanced ICs. This article reviews recent developments in the imprinting of closed nanopores into spin-on materials to produce low-k nanoporous interdielectrics for the production of advanced ICs.