@inproceedings{b0fab6dd5f914732a42112a40a33fa8d,
title = "Improved electrical and transport characteristics of amorphous silicon by enriching with microcrystalline silicon",
abstract = "We have deposited n-i-p diodes with microcrystalline intrinsic layers for radiation detection applications. The diodes show interesting electrical characteristics which have not been reported before. From TOF measurement for our best samples we obtained μe values which are about 3 times larger than our standard a-Si:H. for μτ values approximately a factor of 2 improvement was observed. The ND* values derived from hole-onset measurements show lower ionized dangling bond density than normal a-Si:H material. We have proposed a simple model which can very well explain the experimental results.",
author = "A. Mireshghi and Hong, {W. S.} and J. Drcwery and T. Jing and Kaplan, {S. N.} and Lee, {H. K.} and V. Perez-Mendez",
year = "1994",
doi = "10.1557/proc-336-377",
language = "English",
isbn = "1558992367",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "377--382",
booktitle = "Amorphous Silicon Technology - 1994",
note = "1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",
}