Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes

Hae In Kim, Taehun Lee, Won Yong Lee, Kyoungdu Kim, Jin Hyuk Bae, In Man Kang, Sin Hyung Lee, Kwangeun Kim, Jaewon Jang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


In this study, we fabricated sol-gel-processed Y2O3-based resistive random-access memory (RRAM) devices. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. The long-term stability of the RRAM devices was investigated. The Y2O3 RRAM devices with a 20 nm thick Ag top electrode showed an increase in the low resistance state (LRS) and high resistance state (HRS) and a decrease in the HRS/LRS ratio after 30 days owing to oxidation and corrosion of the Ag electrodes. However, Y2O3 RRAM devices with inert Au-passivated Ag electrodes showed a constant RRAM device performance after 30 days. The 150 nm-thick Au passivation layer successfully suppressed the oxidation and corrosion of the Ag electrode by minimizing the chance of contact between water or oxygen molecules and Ag electrodes. The Au/Ag/Y2O3/ITO RRAM devices exhibited more than 300 switching cycles with a decent resistive window (>103). They maintained constant LRS and HRS resistances for up to 104 s, without significant degradation of nonvolatile memory properties for 30 days while stored in air.

Original languageEnglish
Article number6859
Issue number19
StatePublished - Oct 2022


  • RRAM
  • YO
  • environment stability
  • passivation
  • sol-gel


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