Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor

Jia Sun; Rod Devine; Bal M. Dhar; Byung Jun Jung; Kevin S. See; Howard E. Katz

doi:10.1109/ISDRS.2009.5378035

Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor

Jia Sun, Rod Devine, Bal M. Dhar, Byung Jun Jung, Kevin S. See, Howard E. Katz

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378035
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 9 Dec 2009 → 11 Dec 2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	9/12/09 → 11/12/09

Access to Document

10.1109/ISDRS.2009.5378035

Cite this

Sun, J., Devine, R., Dhar, B. M., Jung, B. J., See, K. S., & Katz, H. E. (2009). Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 Article 5378035 (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378035

@inproceedings{24651cf592584768a0276c8bc4fa7c6e,

title = "Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor",

author = "Jia Sun and Rod Devine and Dhar, \{Bal M.\} and Jung, \{Byung Jun\} and See, \{Kevin S.\} and Katz, \{Howard E.\}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378035",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Sun, J, Devine, R, Dhar, BM, Jung, BJ, See, KS & Katz, HE 2009, Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378035, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 9/12/09. https://doi.org/10.1109/ISDRS.2009.5378035

Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor. / Sun, Jia; Devine, Rod; Dhar, Bal M. et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378035 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor

AU - Sun, Jia

AU - Devine, Rod

AU - Dhar, Bal M.

AU - Jung, Byung Jun

AU - See, Kevin S.

AU - Katz, Howard E.

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/77949367209

U2 - 10.1109/ISDRS.2009.5378035

DO - 10.1109/ISDRS.2009.5378035

M3 - Conference contribution

AN - SCOPUS:77949367209

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor

Publication series

Conference

Access to Document

Other files and links

Cite this