Improved Negative Bias Stability of Sol-Gel-Processed SnO2Thin-Film Transistors with Vertically Controlled Carrier Concentrations

Taehun Lee, Kyoungdu Kim, Hae In Kim, Sin Hyung Lee, Jin Hyuk Bae, In Man Kang, Kwangeun Kim, Won Yong Lee, Jaewon Jang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This study investigates the performance of SnO2thin-film transistors (TFTs) fabricated with vertically controlled carrier concentrations using a sol-gel method. In the proposed fabrication method, thin Al layers are deposited on SnO2surfaces to control carrier concentrations. The deposited Al layers are converted into Al2O3islands on the SnO2surfaces, functioning as Al3+dopant sources after an additional annealing process. Using this process, an oxygen-vacancy-less surface regime inside SnO2semiconductors is successfully formed. It is demonstrated that this morphology significantly reduces bias stress instability by inhibiting trap and de-trap events at the surface of the back channel of TFTs. The fabricated SnO2TFTs with oxygen-vacancy (VO)-less surfaces demonstrate a field-effect mobility of 8.49 cm2/Vs and a threshold voltage shift of only -3.84 V during negative bias tests. However, compared to other existing bias stress stable metal-oxide semiconductors, the proposed SnO2TFTs exhibit only a 3.2% loss in field-effect mobility, alongside improved negative bias stability.

Original languageEnglish
Pages (from-to)2670-2677
Number of pages8
JournalACS Applied Electronic Materials
Volume5
Issue number5
DOIs
StatePublished - 23 May 2023

Keywords

  • SnO
  • bias stability
  • oxygen vacancy
  • sol-gel
  • thin-film transistors
  • vertically controlled carriers

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