Improved Negative Bias Stability of Sol-Gel-Processed SnO₂Thin-Film Transistors with Vertically Controlled Carrier Concentrations

Engineering

• Surface 100%
• Gel 100%
• Transistor 100%
• Carrier Concentration 100%
• Fields 66%
• Oxygen Vacancy 66%
• Performance 33%
• Event 33%
• Sol-Gel Process 33%
• Demonstrates 33%
• Voltage 33%
• Loss 33%
• Fabrication Method 33%
• Dopants 33%
• Annealing Process 33%

Earth and Planetary Sciences

• Bias 100%
• Transistor 100%
• Stability 100%
• Trap 40%
• Oxygen 40%
• Investigation 20%
• Event 20%
• Exhibit 20%
• Loss 20%
• Morphology 20%
• Threshold Voltage 20%
• Stable 20%
• Regime 20%