Improved negative bias stress stability of sol–gel-processed li-doped sno2 thin-film transistors

Hyeon Joong Kim, Do Won Kim, Won Yong Lee, Sin Hyung Lee, Jin Hyuk Bae, Jaewon Jang, In Man Kang

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7 Scopus citations


In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Original languageEnglish
Article number1629
JournalElectronics (Switzerland)
Issue number14
StatePublished - 2 Jul 2021


  • Li doping
  • Negative bias stability
  • SnO
  • Sol–gel
  • Thin-film transistor


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