Improved negative bias stress stability of sol–gel-processed li-doped sno2 thin-film transistors

Hyeon Joong Kim; Do Won Kim; Won Yong Lee; Sin Hyung Lee; Jin Hyuk Bae; Jaewon Jang; In Man Kang

doi:10.3390/electronics10141629

Improved negative bias stress stability of sol–gel-processed li-doped sno₂ thin-film transistors

Hyeon Joong Kim, Do Won Kim, Won Yong Lee, Sin Hyung Lee, Jin Hyuk Bae, Jaewon Jang, In Man Kang

School of Advanced Fusion Studies

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this study, sol–gel-processed Li-doped SnO₂-based thin-film transistors (TFTs) were fabricated on SiO₂/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO₂ semiconductor films delivered the field-effect mobility in a 2.0 cm²/Vs saturation regime and I_on/I_off value of 1 × 10⁸ and showed enhancement mode operation. The decreased oxygen vacancy inside SnO₂ TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Original language	English
Article number	1629
Journal	Electronics (Switzerland)
Volume	10
Issue number	14
DOIs	https://doi.org/10.3390/electronics10141629
State	Published - 2 Jul 2021

Keywords

Li doping
Negative bias stability
SnO
Sol–gel
Thin-film transistor

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title = "Improved negative bias stress stability of sol–gel-processed li-doped sno2 thin-film transistors",

abstract = "In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.",

keywords = "Li doping, Negative bias stability, SnO, Sol–gel, Thin-film transistor",

author = "Kim, {Hyeon Joong} and Kim, {Do Won} and Lee, {Won Yong} and Lee, {Sin Hyung} and Bae, {Jin Hyuk} and Jaewon Jang and Kang, {In Man}",

note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

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doi = "10.3390/electronics10141629",

language = "English",

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journal = "Electronics (Switzerland)",

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T1 - Improved negative bias stress stability of sol–gel-processed li-doped sno2 thin-film transistors

AU - Kim, Hyeon Joong

AU - Kim, Do Won

AU - Lee, Won Yong

AU - Lee, Sin Hyung

AU - Bae, Jin Hyuk

AU - Jang, Jaewon

AU - Kang, In Man

PY - 2021/7/2

Y1 - 2021/7/2

N2 - In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

AB - In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

KW - Li doping

KW - Negative bias stability

KW - SnO

KW - Sol–gel

KW - Thin-film transistor

UR - http://www.scopus.com/inward/record.url?scp=85126078060&partnerID=8YFLogxK

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DO - 10.3390/electronics10141629

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SN - 2079-9292

VL - 10

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 14

M1 - 1629

ER -

Improved negative bias stress stability of sol–gel-processed li-doped sno₂ thin-film transistors

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Keywords

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