Improvement of characteristics with a sub-5 nm ge-doped silicon nitride layer in charge trap flash memory cells

Dong Hua Li, Wandong Kim, Won Bo Shim, Se Hwan Park, Yoon Kim, Gil Sung Lee, Doo Hyun Kim, Jung Hoon Lee, Jang Gn Yun, Seongjae Cho, Il Han Park, Jong Ho Lee, Hyungcheol Shin, Byung Gook Park

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