Improvement of characteristics with a sub-5 nm ge-doped silicon nitride layer in charge trap flash memory cells
- Dong Hua Li
- , Wandong Kim
- , Won Bo Shim
- , Se Hwan Park
- , Yoon Kim
- , Gil Sung Lee
- , Doo Hyun Kim
- , Jung Hoon Lee
- , Jang Gn Yun
- , Seongjae Cho
- , Il Han Park
- , Jong Ho Lee
- , Hyungcheol Shin
- , Byung Gook Park
- Seoul National University
- Samsung
- Gachon University
Research output: Contribution to journal › Article › peer-review