Improvement of dual-Λ spacer for nanowire-FETs considering circuit delay and electricstatic controllability

Hyungwoo Ko, Jongsu Kim, Dokyun Son, Myounggon Kang, Hyungcheol Shin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, the dual-k spacer of nanowire-FET is investigated using a variety of materials compared with single spacer. The proposed structure shows significant improvement of delay characteristics and better electrostatic controllability than those of single spacer.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages39-40
Number of pages2
ISBN (Electronic)9784863486478
DOIs
StatePublished - 29 Dec 2017
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 4 Jun 20175 Jun 2017

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Conference

Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/TerritoryJapan
CityKyoto
Period4/06/175/06/17

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