@inproceedings{e521a672e62b414288501365a328309f,
title = "Improving BSIM Flicker Noise Model",
abstract = "We modified BSIM flicker noise model and extracted the noise parameters as a function of gate bias. In the proposed model, three noise parameters (NOIA, NOIB and NOIC) were found to be proportional to the oxide trap density. The measured flicker noise of the MOSFET is compared with the existing model and the proposed model, and it is confirmed that the proposed model has higher accuracy.",
keywords = "Carrier number fluctuation, Mobility fluctuation, NOIB, NOIC, Noise parameter NOIA, Oxide trap density, Unified flicker noise model",
author = "Youngsoo Seo and Changbeom Woo and Myunghee Lee and Myounggon Kang and Jongwook Jeon and Hyungcheol Shin",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731123",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "32--34",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
address = "United States",
}