Improving BSIM Flicker Noise Model

Youngsoo Seo, Changbeom Woo, Myunghee Lee, Myounggon Kang, Jongwook Jeon, Hyungcheol Shin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We modified BSIM flicker noise model and extracted the noise parameters as a function of gate bias. In the proposed model, three noise parameters (NOIA, NOIB and NOIC) were found to be proportional to the oxide trap density. The measured flicker noise of the MOSFET is compared with the existing model and the proposed model, and it is confirmed that the proposed model has higher accuracy.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages32-34
Number of pages3
ISBN (Electronic)9781538665084
DOIs
StatePublished - Mar 2019
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 12 Mar 201915 Mar 2019

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/TerritorySingapore
CitySingapore
Period12/03/1915/03/19

Keywords

  • Carrier number fluctuation
  • Mobility fluctuation
  • NOIB
  • NOIC
  • Noise parameter NOIA
  • Oxide trap density
  • Unified flicker noise model

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