Improving read disturb characteristics by self-boosting read scheme for multilevel NAND flash memories

Myounggon Kang; Ki Tae Park; Youngsun Song; Soonwook Hwang; Byung Yong Choi; Yunheub Song; Yeong Taek Lee; Changhyun Kim

doi:10.1143/JJAP.48.04C062

Improving read disturb characteristics by self-boosting read scheme for multilevel NAND flash memories

Myounggon Kang, Ki Tae Park, Youngsun Song, Soonwook Hwang, Byung Yong Choi, Yunheub Song, Yeong Taek Lee, Changhyun Kim

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

A new NAND string and its read operation scheme using self-boosting as a solution for improving read disturb characteristics of NAND flash memories are proposed. By using the proposed self-boosting read scheme, which includes an optimized bias voltage and adjusted threshold voltage (V_th) of dummy cells, the self-boosted channel voltage prevents soft-programming in unselected memory cells during read operation due to reduced electric field across tunnel oxide. Compared to the conventional scheme this leads to a significant improvement in read disturb characteristics. From simulation and measurement results, the worst electric field of the proposed NAND flash memory during read operation is decreased by around 50% and V_th shifts caused by read disturb is lowered by around 40%, compared to conventional NAND. The proposed NAND was fabricated in a 60 nm NAND technology and successfully demonstrated.

Original language	English
Article number	04C062
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	48
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.04C062
State	Published - Apr 2009

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title = "Improving read disturb characteristics by self-boosting read scheme for multilevel NAND flash memories",

abstract = "A new NAND string and its read operation scheme using self-boosting as a solution for improving read disturb characteristics of NAND flash memories are proposed. By using the proposed self-boosting read scheme, which includes an optimized bias voltage and adjusted threshold voltage (Vth) of dummy cells, the self-boosted channel voltage prevents soft-programming in unselected memory cells during read operation due to reduced electric field across tunnel oxide. Compared to the conventional scheme this leads to a significant improvement in read disturb characteristics. From simulation and measurement results, the worst electric field of the proposed NAND flash memory during read operation is decreased by around 50% and Vth shifts caused by read disturb is lowered by around 40%, compared to conventional NAND. The proposed NAND was fabricated in a 60 nm NAND technology and successfully demonstrated.",

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AU - Kang, Myounggon

AU - Park, Ki Tae

AU - Song, Youngsun

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AU - Choi, Byung Yong

AU - Song, Yunheub

AU - Lee, Yeong Taek

AU - Kim, Changhyun

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Improving read disturb characteristics by self-boosting read scheme for multilevel NAND flash memories

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