Impurity scattering effects on transport through gate-all-around Si nanowires

Jung Hyun Oh, D. Ahn, S. W. Hwang, J. S. Hwang, M. H. Son

Research output: Contribution to journalArticlepeer-review


We investigate effects of impurity scattering on current-voltage characteristics in a gate-all-around Si nanowire theoretically. Using non-equilibrium Green's function technique, the self-energy for the impurity scattering is incorporated under the self-consistent Born approximation. We show that the impurity scattering changes the electronic structure of the Si nanowire largely and, thus, results in very different current-voltage curves compared to the case of the free-impurity scattering.

Original languageEnglish
Pages (from-to)1526-1529
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number5
StatePublished - Mar 2008


  • Green's function
  • Impurity scattering
  • Nanowire transistor


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