@inproceedings{c5ae84f1b06241e792f2e83a022f15de,
title = "In-depth analysis of self-heating effects in vertical nanoplate-shaped GAAFETs",
abstract = "Self-heating effects (SHEs) were studied on the vertical nanoplate-shaped gate-all-around (GAA) FETs (vNPFETs) as a target of 5nm node technology. The thermal properties are compared between face-up and face-down configuration. Decreasing the channel width is vulnerable to both configurations in terms of SHEs due to the reduced area of heat dissipation. It is well known that the SHE is alleviated on AC condition, while our results show that the SHE is still important in vNPFET on AC condition.",
author = "Dokyun Son and Ilho Myeong and Hyunsuk Kim and Myounggon Kang and Hyungcheol Shin",
note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",
year = "2017",
month = dec,
day = "29",
doi = "10.23919/SNW.2017.8242300",
language = "English",
series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "67--68",
booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
address = "United States",
}