In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM

Dongkyu Cha; S. Y. Park; Su Jin Ahn; H. Horii; D. H. Kim; Y. K. Kim; S. O. Park; U. In Jung; Moon J. Kim; Jiyoung Kim

doi:10.1017/S1431927609097694

In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM

Dongkyu Cha, S. Y. Park, Su Jin Ahn, H. Horii, D. H. Kim, Y. K. Kim, S. O. Park, U. In Jung, Moon J. Kim, Jiyoung Kim

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Original language	English
Pages (from-to)	716-717
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	15
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927609097694
State	Published - Jul 2009

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title = "In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM",

author = "Dongkyu Cha and Park, \{S. Y.\} and Ahn, \{Su Jin\} and H. Horii and Kim, \{D. H.\} and Kim, \{Y. K.\} and Park, \{S. O.\} and Jung, \{U. In\} and Kim, \{Moon J.\} and Jiyoung Kim",

year = "2009",

month = jul,

doi = "10.1017/S1431927609097694",

language = "English",

volume = "15",

pages = "716--717",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Oxford University Press",

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T1 - In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM

AU - Cha, Dongkyu

AU - Park, S. Y.

AU - Ahn, Su Jin

AU - Horii, H.

AU - Kim, D. H.

AU - Kim, Y. K.

AU - Park, S. O.

AU - Jung, U. In

AU - Kim, Moon J.

AU - Kim, Jiyoung

PY - 2009/7

Y1 - 2009/7

UR - https://www.scopus.com/pages/publications/69949156939

U2 - 10.1017/S1431927609097694

DO - 10.1017/S1431927609097694

M3 - Article

AN - SCOPUS:69949156939

SN - 1431-9276

VL - 15

SP - 716

EP - 717

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - SUPPL. 2

ER -

In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM

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