In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM

Dongkyu Cha; S. Y. Park; Su Jin Ahn; H. Horii; D. H. Kim; Y. K. Kim; S. O. Park; U. In Jung; Moon J. Kim; Jiyoung Kim

doi:10.1017/S1431927609097694

In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM

Dongkyu Cha
, S. Y. Park
, Su Jin Ahn
, H. Horii
, D. H. Kim
, Y. K. Kim
, S. O. Park
, U. In Jung
, Moon J. Kim
, Jiyoung Kim

School of Electrical and Computer Engineering

University of Texas at Dallas
Samsung

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Original language	English
Pages (from-to)	716-717
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	15
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927609097694
State	Published - Jul 2009

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title = "In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM",

author = "Dongkyu Cha and Park, \{S. Y.\} and Ahn, \{Su Jin\} and H. Horii and Kim, \{D. H.\} and Kim, \{Y. K.\} and Park, \{S. O.\} and Jung, \{U. In\} and Kim, \{Moon J.\} and Jiyoung Kim",

year = "2009",

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doi = "10.1017/S1431927609097694",

language = "English",

volume = "15",

pages = "716--717",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

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T1 - In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM

AU - Cha, Dongkyu

AU - Park, S. Y.

AU - Ahn, Su Jin

AU - Horii, H.

AU - Kim, D. H.

AU - Kim, Y. K.

AU - Park, S. O.

AU - Jung, U. In

AU - Kim, Moon J.

AU - Kim, Jiyoung

PY - 2009/7

Y1 - 2009/7

UR - https://www.scopus.com/pages/publications/69949156939

U2 - 10.1017/S1431927609097694

DO - 10.1017/S1431927609097694

M3 - Article

AN - SCOPUS:69949156939

SN - 1431-9276

VL - 15

SP - 716

EP - 717

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - SUPPL. 2

ER -

In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM

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