InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning

Yinggang Huang; Tae Wan Kim; Shisheng Xiong; Luke J. Mawst; Thomas F. Kuech; Paul F. Nealey; Yushuai Dai; Zihao Wang; Wei Guo; David Forbes; Seth M. Hubbard; Michael Nesnidal

doi:10.1021/nl403163x

InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning

Yinggang Huang, Tae Wan Kim, Shisheng Xiong, Luke J. Mawst, Thomas F. Kuech, Paul F. Nealey, Yushuai Dai, Zihao Wang, Wei Guo, David Forbes, Seth M. Hubbard, Michael Nesnidal

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Dense arrays of indium arsenide (InAs) nanowire materials have been grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) using polystyrene-b-poly(methyl methacrylate) (PS/PMMA) diblock copolymer (DBC) nanopatterning technique, which is a catalyst-free approach. Nanoscale openings were defined in a thin (∼10 nm) SiN_x layer deposited on a (111)B-oriented GaAs substrate using the DBC process and CF₄ reactive ion etching (RIE), which served as a hard mask for the nanowire growth. InAs nanowires with diameters down to ∼20 nm and micrometer-scale lengths were achieved with a density of ∼5 × 10¹⁰ cm². The nanowire structures were characterized by scanning electron microscopy and transmission electron microscopy, which indicate twin defects in a primary zincblende crystal structure and the absence of threading dislocation within the imaged regions.

Original language	English
Pages (from-to)	5979-5984
Number of pages	6
Journal	Nano Letters
Volume	13
Issue number	12
DOIs	https://doi.org/10.1021/nl403163x
State	Published - 11 Dec 2013

Keywords

MOVPE
Nanostructures
nanowires
selective-area growth
semiconducting III-V materials
solar cells

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10.1021/nl403163x

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@article{15fc869594a849e3959e32de91c62824,

title = "InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning",

abstract = "Dense arrays of indium arsenide (InAs) nanowire materials have been grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) using polystyrene-b-poly(methyl methacrylate) (PS/PMMA) diblock copolymer (DBC) nanopatterning technique, which is a catalyst-free approach. Nanoscale openings were defined in a thin (∼10 nm) SiNx layer deposited on a (111)B-oriented GaAs substrate using the DBC process and CF4 reactive ion etching (RIE), which served as a hard mask for the nanowire growth. InAs nanowires with diameters down to ∼20 nm and micrometer-scale lengths were achieved with a density of ∼5 × 1010 cm2. The nanowire structures were characterized by scanning electron microscopy and transmission electron microscopy, which indicate twin defects in a primary zincblende crystal structure and the absence of threading dislocation within the imaged regions.",

keywords = "MOVPE, Nanostructures, nanowires, selective-area growth, semiconducting III-V materials, solar cells",

author = "Yinggang Huang and Kim, {Tae Wan} and Shisheng Xiong and Mawst, {Luke J.} and Kuech, {Thomas F.} and Nealey, {Paul F.} and Yushuai Dai and Zihao Wang and Wei Guo and David Forbes and Hubbard, {Seth M.} and Michael Nesnidal",

year = "2013",

month = dec,

day = "11",

doi = "10.1021/nl403163x",

language = "English",

volume = "13",

pages = "5979--5984",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning

AU - Huang, Yinggang

AU - Kim, Tae Wan

AU - Xiong, Shisheng

AU - Mawst, Luke J.

AU - Kuech, Thomas F.

AU - Nealey, Paul F.

AU - Dai, Yushuai

AU - Wang, Zihao

AU - Guo, Wei

AU - Forbes, David

AU - Hubbard, Seth M.

AU - Nesnidal, Michael

PY - 2013/12/11

Y1 - 2013/12/11

N2 - Dense arrays of indium arsenide (InAs) nanowire materials have been grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) using polystyrene-b-poly(methyl methacrylate) (PS/PMMA) diblock copolymer (DBC) nanopatterning technique, which is a catalyst-free approach. Nanoscale openings were defined in a thin (∼10 nm) SiNx layer deposited on a (111)B-oriented GaAs substrate using the DBC process and CF4 reactive ion etching (RIE), which served as a hard mask for the nanowire growth. InAs nanowires with diameters down to ∼20 nm and micrometer-scale lengths were achieved with a density of ∼5 × 1010 cm2. The nanowire structures were characterized by scanning electron microscopy and transmission electron microscopy, which indicate twin defects in a primary zincblende crystal structure and the absence of threading dislocation within the imaged regions.

AB - Dense arrays of indium arsenide (InAs) nanowire materials have been grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) using polystyrene-b-poly(methyl methacrylate) (PS/PMMA) diblock copolymer (DBC) nanopatterning technique, which is a catalyst-free approach. Nanoscale openings were defined in a thin (∼10 nm) SiNx layer deposited on a (111)B-oriented GaAs substrate using the DBC process and CF4 reactive ion etching (RIE), which served as a hard mask for the nanowire growth. InAs nanowires with diameters down to ∼20 nm and micrometer-scale lengths were achieved with a density of ∼5 × 1010 cm2. The nanowire structures were characterized by scanning electron microscopy and transmission electron microscopy, which indicate twin defects in a primary zincblende crystal structure and the absence of threading dislocation within the imaged regions.

KW - MOVPE

KW - Nanostructures

KW - nanowires

KW - selective-area growth

KW - semiconducting III-V materials

KW - solar cells

UR - http://www.scopus.com/inward/record.url?scp=84890383265&partnerID=8YFLogxK

U2 - 10.1021/nl403163x

DO - 10.1021/nl403163x

M3 - Article

C2 - 24274630

AN - SCOPUS:84890383265

SN - 1530-6984

VL - 13

SP - 5979

EP - 5984

JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning

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