Influence of hydrogen annealing on low temperature (≤ 200 °C) silicon nitride films for display devices

Kyoung Min Lee; Jae Dam Hwang; Yeon Jin Lee; Kil Sun No; Wan Shick Hong

Influence of hydrogen annealing on low temperature (≤ 200 °C) silicon nitride films for display devices

Kyoung Min Lee, Jae Dam Hwang, Yeon Jin Lee, Kil Sun No, Wan Shick Hong

Department of Materials Science and Engineering

University of Seoul

Research output: Contribution to conference › Paper › peer-review

Abstract

The influence of hydrogen annealing on dielectric silicon nitride film and silicon nanocrystals embedded in silicon nitride film was investigated. These films were prepared by catalytic chemical vapor deposition technique at substrate temperatures below 200 °C. The optical and electrical properties of these films were improved by hydrogen annealing.

Original language	English
Pages	903-904
Number of pages	2
State	Published - 2009
Event	16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 9 Dec 2009 → 11 Dec 2009

Conference

Conference	16th International Display Workshops, IDW '09
Country/Territory	Japan
City	Miyazaki
Period	9/12/09 → 11/12/09

Cite this

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title = "Influence of hydrogen annealing on low temperature (≤ 200 °C) silicon nitride films for display devices",

abstract = "The influence of hydrogen annealing on dielectric silicon nitride film and silicon nanocrystals embedded in silicon nitride film was investigated. These films were prepared by catalytic chemical vapor deposition technique at substrate temperatures below 200 °C. The optical and electrical properties of these films were improved by hydrogen annealing.",

author = "Lee, {Kyoung Min} and Hwang, {Jae Dam} and Lee, {Yeon Jin} and No, {Kil Sun} and Hong, {Wan Shick}",

year = "2009",

language = "English",

pages = "903--904",

note = "16th International Display Workshops, IDW '09 ; Conference date: 09-12-2009 Through 11-12-2009",

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TY - CONF

T1 - Influence of hydrogen annealing on low temperature (≤ 200 °C) silicon nitride films for display devices

AU - Lee, Kyoung Min

AU - Hwang, Jae Dam

AU - Lee, Yeon Jin

AU - No, Kil Sun

AU - Hong, Wan Shick

PY - 2009

Y1 - 2009

N2 - The influence of hydrogen annealing on dielectric silicon nitride film and silicon nanocrystals embedded in silicon nitride film was investigated. These films were prepared by catalytic chemical vapor deposition technique at substrate temperatures below 200 °C. The optical and electrical properties of these films were improved by hydrogen annealing.

AB - The influence of hydrogen annealing on dielectric silicon nitride film and silicon nanocrystals embedded in silicon nitride film was investigated. These films were prepared by catalytic chemical vapor deposition technique at substrate temperatures below 200 °C. The optical and electrical properties of these films were improved by hydrogen annealing.

UR - http://www.scopus.com/inward/record.url?scp=77954157034&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:77954157034

SP - 903

EP - 904

T2 - 16th International Display Workshops, IDW '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Influence of hydrogen annealing on low temperature (≤ 200 °C) silicon nitride films for display devices

Abstract

Conference

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