Influence of material properties of PECVD silicon nitride films prepared at 150°C from highly diluted SiH₄ in N₂

Material Science

• Dielectric Material 100%
• Dilution 50%
• Electrical Property 50%
• Electrical Resistivity 50%
• Film 50%
• Gas 50%
• Gas Mixture 50%
• Materials Property 100%
• Mechanical Strength 50%
• Plasma-Enhanced Chemical Vapor Deposition 100%
• Silicon Nitride 100%
• Temperature 50%

Engineering

• Breakdown Field 50%
• Current Ratio 50%
• Deposited Film 100%
• Dielectric Layer 50%
• Dilution 50%
• Field Strength 50%
• Nitrogen Atom 50%
• Subthreshold Slope 50%
• Vapor Deposition Method 50%

Chemical Engineering

• Nitrogen 50%
• Temperature 50%