@inproceedings{f6c3dc6dc9c142d4ab91291a7cf99cab,
title = "Influence of polar face on optical properties of staggered 440 nm InGaN/InGaN/GaN quantum-well light-emitting diodes",
abstract = "The influence of the polar plane on optical properties of staggered InGaN/InGaN/GaN quantum well (QW) light-emitting diodes was investigated using the multiband effective mass theory. The N-face staggered InGaN/InGaN/GaN QW structure has a greater spontaneous emission peak than the Gaface staggered InGaN/InGaN/GaN QW structure because the before has a larger matrix element than the latter. On the other hand, the heavy-hole effective mass around the topmost valence band is not affected nearly by the polarity. We expect that the N-face staggered InGaN/InGaN/GaN QW structure has an improved characteristics compared to the Ga-face staggered InGaN/InGaN/GaN QW structure.",
author = "Park, \{S. H.\} and Kim, \{B. H.\} and D. Ahn and Lee, \{Y. T.\}",
year = "2010",
doi = "10.1109/NUSOD.2010.5595649",
language = "English",
isbn = "9781424470174",
series = "10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010",
pages = "93--94",
booktitle = "10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010",
note = "10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 ; Conference date: 06-09-2010 Through 09-09-2010",
}