Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment

A. S. Chang; E. S. Zech; T. W. Kim; Y. H. Lin; L. J. Mawst; R. S. Goldman

doi:10.1063/1.4896781

Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment

A. S. Chang, E. S. Zech, T. W. Kim, Y. H. Lin, L. J. Mawst, R. S. Goldman

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have investigated the influence of Sb incorporation on the effective band gaps and band offsets at InGaAs(Sb)N/GaAs interfaces grown by metalorganic vapor phase epitaxy. Cross-sectional scanning tunneling microscopy and spectroscopy reveal 1.2eV (1.1eV) effective band gaps of InGaAs(Sb)N alloys. At the InGaAsN/GaAs (InGaAsSbN/GaAs) interfaces, type II (type I) band offsets are observed. We discuss the relative influences of strain-induced splitting of the valence band and the incorporation of Sb on the band gaps and band offsets at InGaAsN/GaAs and InGaAsSbN/GaAs interfaces.

Original language	English
Article number	142105
Journal	Applied Physics Letters
Volume	105
Issue number	14
DOIs	https://doi.org/10.1063/1.4896781
State	Published - 6 Oct 2014

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title = "Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment",

abstract = "We have investigated the influence of Sb incorporation on the effective band gaps and band offsets at InGaAs(Sb)N/GaAs interfaces grown by metalorganic vapor phase epitaxy. Cross-sectional scanning tunneling microscopy and spectroscopy reveal 1.2eV (1.1eV) effective band gaps of InGaAs(Sb)N alloys. At the InGaAsN/GaAs (InGaAsSbN/GaAs) interfaces, type II (type I) band offsets are observed. We discuss the relative influences of strain-induced splitting of the valence band and the incorporation of Sb on the band gaps and band offsets at InGaAsN/GaAs and InGaAsSbN/GaAs interfaces.",

author = "Chang, {A. S.} and Zech, {E. S.} and Kim, {T. W.} and Lin, {Y. H.} and Mawst, {L. J.} and Goldman, {R. S.}",

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AU - Chang, A. S.

AU - Zech, E. S.

AU - Kim, T. W.

AU - Lin, Y. H.

AU - Mawst, L. J.

AU - Goldman, R. S.

PY - 2014/10/6

Y1 - 2014/10/6

N2 - We have investigated the influence of Sb incorporation on the effective band gaps and band offsets at InGaAs(Sb)N/GaAs interfaces grown by metalorganic vapor phase epitaxy. Cross-sectional scanning tunneling microscopy and spectroscopy reveal 1.2eV (1.1eV) effective band gaps of InGaAs(Sb)N alloys. At the InGaAsN/GaAs (InGaAsSbN/GaAs) interfaces, type II (type I) band offsets are observed. We discuss the relative influences of strain-induced splitting of the valence band and the incorporation of Sb on the band gaps and band offsets at InGaAsN/GaAs and InGaAsSbN/GaAs interfaces.

AB - We have investigated the influence of Sb incorporation on the effective band gaps and band offsets at InGaAs(Sb)N/GaAs interfaces grown by metalorganic vapor phase epitaxy. Cross-sectional scanning tunneling microscopy and spectroscopy reveal 1.2eV (1.1eV) effective band gaps of InGaAs(Sb)N alloys. At the InGaAsN/GaAs (InGaAsSbN/GaAs) interfaces, type II (type I) band offsets are observed. We discuss the relative influences of strain-induced splitting of the valence band and the incorporation of Sb on the band gaps and band offsets at InGaAsN/GaAs and InGaAsSbN/GaAs interfaces.

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VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment

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