Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

Jooyoun Kim; Sunghoon Jung; E. J. Choi; Kitae Kim; Kimoon Lee; Seongil Im

doi:10.1063/1.3049604

Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

Jooyoun Kim, Sunghoon Jung, E. J. Choi, Kitae Kim, Kimoon Lee, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (V_GS <40 V), which evolves toward a standard Drude behavior as V_GS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with V_GS.

Original language	English
Article number	241902
Journal	Applied Physics Letters
Volume	93
Issue number	24
DOIs	https://doi.org/10.1063/1.3049604
State	Published - 2008

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abstract = "We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (VGS <40 V), which evolves toward a standard Drude behavior as VGS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with VGS.",

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AU - Jung, Sunghoon

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AU - Lee, Kimoon

AU - Im, Seongil

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AB - We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (VGS <40 V), which evolves toward a standard Drude behavior as VGS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with VGS.

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Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

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