Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

Jooyoun Kim; Sunghoon Jung; E. J. Choi; Kitae Kim; Kimoon Lee; Seongil Im

doi:10.1063/1.3049604

Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

Jooyoun Kim, Sunghoon Jung, E. J. Choi, Kitae Kim, Kimoon Lee, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (V_GS <40 V), which evolves toward a standard Drude behavior as V_GS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with V_GS.

Original language	English
Article number	241902
Journal	Applied Physics Letters
Volume	93
Issue number	24
DOIs	https://doi.org/10.1063/1.3049604
State	Published - 2008

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@article{4a4c4ae9e2ed414cadd61adbc41725ca,

title = "Infrared spectroscopy of the interface charge in a ZnO field-effect transistor",

abstract = "We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (VGS <40 V), which evolves toward a standard Drude behavior as VGS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with VGS.",

author = "Jooyoun Kim and Sunghoon Jung and Choi, \{E. J.\} and Kitae Kim and Kimoon Lee and Seongil Im",

year = "2008",

doi = "10.1063/1.3049604",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

AU - Kim, Jooyoun

AU - Jung, Sunghoon

AU - Choi, E. J.

AU - Kim, Kitae

AU - Lee, Kimoon

AU - Im, Seongil

PY - 2008

Y1 - 2008

N2 - We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (VGS <40 V), which evolves toward a standard Drude behavior as VGS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with VGS.

AB - We used far-infrared transmission spectroscopy to probe the electrostatically induced charge carriers in a ZnO field-effect transistor. The carrier absorption spectrum exhibits a non-Drude, incoherent conduction behavior at low gate-source voltages (VGS <40 V), which evolves toward a standard Drude behavior as VGS is increased. This change is explained successfully by a generalized Drude model. We find that the interface carriers undergo strong backscattering collisions during the channel conduction and the microscopic scattering angle changes with VGS.

UR - https://www.scopus.com/pages/publications/57849165468

U2 - 10.1063/1.3049604

DO - 10.1063/1.3049604

M3 - Article

AN - SCOPUS:57849165468

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241902

ER -

Infrared spectroscopy of the interface charge in a ZnO field-effect transistor

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