InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror

Ye Seul Yun; Sanghyeon Kim; Han Youl Ryu; Min Su Park; Hojin Jang; Jong Han Song; Weon Cheol Lim; Young Jun Chang; Won Jun Choi

doi:10.1016/j.cap.2016.05.023

InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror

Ye Seul Yun, Sanghyeon Kim, Han Youl Ryu, Min Su Park, Hojin Jang, Jong Han Song, Weon Cheol Lim, Young Jun Chang, Won Jun Choi

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report a proton irradiation-induced intermixing on InGaAs/GaAs quantum well (QW) heterostructures with thick upper cladding layers. Proton irradiation was performed with different dose, followed with annealing. Proton irradiated and annealed sample shows the blue-shift of the photoluminescence (PL) spectra and the blue-shift energy was increased up to about 30 meV with increasing dose, but was insensitive to the annealing temperature. Finally, we calculated that the relative absorption coefficient at the laser wavelength for the irradiated sample with dose of 1 × 10¹⁶/cm² was 0.045, suggesting such proton irradiation-induced intermixing is a promising approach for fabricating non-absorbing mirror.

Original language	English
Pages (from-to)	1005-1008
Number of pages	4
Journal	Current Applied Physics
Volume	16
Issue number	9
DOIs	https://doi.org/10.1016/j.cap.2016.05.023
State	Published - 1 Sep 2016

Keywords

Non-absorbing mirror
Proton irradiation
Quantum well intermixing

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10.1016/j.cap.2016.05.023

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title = "InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror",

abstract = "We report a proton irradiation-induced intermixing on InGaAs/GaAs quantum well (QW) heterostructures with thick upper cladding layers. Proton irradiation was performed with different dose, followed with annealing. Proton irradiated and annealed sample shows the blue-shift of the photoluminescence (PL) spectra and the blue-shift energy was increased up to about 30 meV with increasing dose, but was insensitive to the annealing temperature. Finally, we calculated that the relative absorption coefficient at the laser wavelength for the irradiated sample with dose of 1 × 1016/cm2 was 0.045, suggesting such proton irradiation-induced intermixing is a promising approach for fabricating non-absorbing mirror.",

keywords = "Non-absorbing mirror, Proton irradiation, Quantum well intermixing",

author = "Yun, {Ye Seul} and Sanghyeon Kim and Ryu, {Han Youl} and Park, {Min Su} and Hojin Jang and Song, {Jong Han} and Lim, {Weon Cheol} and Chang, {Young Jun} and Choi, {Won Jun}",

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doi = "10.1016/j.cap.2016.05.023",

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journal = "Current Applied Physics",

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TY - JOUR

T1 - InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror

AU - Yun, Ye Seul

AU - Kim, Sanghyeon

AU - Ryu, Han Youl

AU - Park, Min Su

AU - Jang, Hojin

AU - Song, Jong Han

AU - Lim, Weon Cheol

AU - Chang, Young Jun

AU - Choi, Won Jun

PY - 2016/9/1

Y1 - 2016/9/1

N2 - We report a proton irradiation-induced intermixing on InGaAs/GaAs quantum well (QW) heterostructures with thick upper cladding layers. Proton irradiation was performed with different dose, followed with annealing. Proton irradiated and annealed sample shows the blue-shift of the photoluminescence (PL) spectra and the blue-shift energy was increased up to about 30 meV with increasing dose, but was insensitive to the annealing temperature. Finally, we calculated that the relative absorption coefficient at the laser wavelength for the irradiated sample with dose of 1 × 1016/cm2 was 0.045, suggesting such proton irradiation-induced intermixing is a promising approach for fabricating non-absorbing mirror.

AB - We report a proton irradiation-induced intermixing on InGaAs/GaAs quantum well (QW) heterostructures with thick upper cladding layers. Proton irradiation was performed with different dose, followed with annealing. Proton irradiated and annealed sample shows the blue-shift of the photoluminescence (PL) spectra and the blue-shift energy was increased up to about 30 meV with increasing dose, but was insensitive to the annealing temperature. Finally, we calculated that the relative absorption coefficient at the laser wavelength for the irradiated sample with dose of 1 × 1016/cm2 was 0.045, suggesting such proton irradiation-induced intermixing is a promising approach for fabricating non-absorbing mirror.

KW - Non-absorbing mirror

KW - Proton irradiation

KW - Quantum well intermixing

UR - http://www.scopus.com/inward/record.url?scp=84973338419&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2016.05.023

DO - 10.1016/j.cap.2016.05.023

M3 - Article

AN - SCOPUS:84973338419

SN - 1567-1739

VL - 16

SP - 1005

EP - 1008

JO - Current Applied Physics

JF - Current Applied Physics

IS - 9

ER -

InGaAs/GaAs quantum well intermixing using proton irradiation for non-absorbing mirror

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Keywords

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