InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition

Youngjo Kim; Kangho Kim; Tae Wan Kim; Luke J. Mawst; Thomas F. Kuech; Chang Zoo Kim; Won Kyu Park; Jaejin Lee

doi:10.1016/j.solener.2014.01.019

InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition

Youngjo Kim, Kangho Kim, Tae Wan Kim, Luke J. Mawst, Thomas F. Kuech, Chang Zoo Kim, Won Kyu Park, Jaejin Lee

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

InGaAsNSb/Ge (1.14/0.67. eV) double-junction solar cells have been grown by metalorganic chemical vapor deposition (MOCVD). Ge p-n junction structures are realized by phosphorous diffusion on p-type Ge substrates. GaAs/InGaAsNSb heterojunction structures are grown on the Ge solar cells. The single-junction InGaAsNSb and Ge subcells are electrically connected by a GaAs tunnel junction. The fabricated solar cell exhibits an efficiency of 9.05% under AM 1.5G illumination with an open circuit voltage of 0.92. V. The InGaAsNSb subcell possessed a low external quantum efficiency over the sub-GaAs bandgap spectral range, reflecting the short minority carrier diffusion length of the dilute-nitride-antimonide material.

Original language	English
Pages (from-to)	126-130
Number of pages	5
Journal	Solar Energy
Volume	102
DOIs	https://doi.org/10.1016/j.solener.2014.01.019
State	Published - Apr 2014

Keywords

Germanium
InGaAsNSb
MOCVD
Solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solener.2014.01.019

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@article{19f2f9e6901047a294c269ca6bb81668,

title = "InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition",

abstract = "InGaAsNSb/Ge (1.14/0.67. eV) double-junction solar cells have been grown by metalorganic chemical vapor deposition (MOCVD). Ge p-n junction structures are realized by phosphorous diffusion on p-type Ge substrates. GaAs/InGaAsNSb heterojunction structures are grown on the Ge solar cells. The single-junction InGaAsNSb and Ge subcells are electrically connected by a GaAs tunnel junction. The fabricated solar cell exhibits an efficiency of 9.05% under AM 1.5G illumination with an open circuit voltage of 0.92. V. The InGaAsNSb subcell possessed a low external quantum efficiency over the sub-GaAs bandgap spectral range, reflecting the short minority carrier diffusion length of the dilute-nitride-antimonide material.",

keywords = "Germanium, InGaAsNSb, MOCVD, Solar cells",

author = "Youngjo Kim and Kangho Kim and Kim, {Tae Wan} and Mawst, {Luke J.} and Kuech, {Thomas F.} and Kim, {Chang Zoo} and Park, {Won Kyu} and Jaejin Lee",

year = "2014",

month = apr,

doi = "10.1016/j.solener.2014.01.019",

language = "English",

volume = "102",

pages = "126--130",

journal = "Solar Energy",

issn = "0038-092X",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition

AU - Kim, Youngjo

AU - Kim, Kangho

AU - Kim, Tae Wan

AU - Mawst, Luke J.

AU - Kuech, Thomas F.

AU - Kim, Chang Zoo

AU - Park, Won Kyu

AU - Lee, Jaejin

PY - 2014/4

Y1 - 2014/4

N2 - InGaAsNSb/Ge (1.14/0.67. eV) double-junction solar cells have been grown by metalorganic chemical vapor deposition (MOCVD). Ge p-n junction structures are realized by phosphorous diffusion on p-type Ge substrates. GaAs/InGaAsNSb heterojunction structures are grown on the Ge solar cells. The single-junction InGaAsNSb and Ge subcells are electrically connected by a GaAs tunnel junction. The fabricated solar cell exhibits an efficiency of 9.05% under AM 1.5G illumination with an open circuit voltage of 0.92. V. The InGaAsNSb subcell possessed a low external quantum efficiency over the sub-GaAs bandgap spectral range, reflecting the short minority carrier diffusion length of the dilute-nitride-antimonide material.

AB - InGaAsNSb/Ge (1.14/0.67. eV) double-junction solar cells have been grown by metalorganic chemical vapor deposition (MOCVD). Ge p-n junction structures are realized by phosphorous diffusion on p-type Ge substrates. GaAs/InGaAsNSb heterojunction structures are grown on the Ge solar cells. The single-junction InGaAsNSb and Ge subcells are electrically connected by a GaAs tunnel junction. The fabricated solar cell exhibits an efficiency of 9.05% under AM 1.5G illumination with an open circuit voltage of 0.92. V. The InGaAsNSb subcell possessed a low external quantum efficiency over the sub-GaAs bandgap spectral range, reflecting the short minority carrier diffusion length of the dilute-nitride-antimonide material.

KW - Germanium

KW - InGaAsNSb

KW - MOCVD

KW - Solar cells

UR - http://www.scopus.com/inward/record.url?scp=84893793608&partnerID=8YFLogxK

U2 - 10.1016/j.solener.2014.01.019

DO - 10.1016/j.solener.2014.01.019

M3 - Article

AN - SCOPUS:84893793608

SN - 0038-092X

VL - 102

SP - 126

EP - 130

JO - Solar Energy

JF - Solar Energy

ER -

InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition

Abstract

Keywords

UN SDGs

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