InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition

Youngjo Kim, Kangho Kim, Tae Wan Kim, Luke J. Mawst, Thomas F. Kuech, Chang Zoo Kim, Won Kyu Park, Jaejin Lee

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

InGaAsNSb/Ge (1.14/0.67. eV) double-junction solar cells have been grown by metalorganic chemical vapor deposition (MOCVD). Ge p-n junction structures are realized by phosphorous diffusion on p-type Ge substrates. GaAs/InGaAsNSb heterojunction structures are grown on the Ge solar cells. The single-junction InGaAsNSb and Ge subcells are electrically connected by a GaAs tunnel junction. The fabricated solar cell exhibits an efficiency of 9.05% under AM 1.5G illumination with an open circuit voltage of 0.92. V. The InGaAsNSb subcell possessed a low external quantum efficiency over the sub-GaAs bandgap spectral range, reflecting the short minority carrier diffusion length of the dilute-nitride-antimonide material.

Original languageEnglish
Pages (from-to)126-130
Number of pages5
JournalSolar Energy
Volume102
DOIs
StatePublished - Apr 2014

Keywords

  • Germanium
  • InGaAsNSb
  • MOCVD
  • Solar cells

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