Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time

Taeyoung Cho; Hyunju Kim; Myounggon Kang

doi:10.3390/app13052909

Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time

Taeyoung Cho, Hyunju Kim, Myounggon Kang

School of Advanced Fusion Studies

Korea National University of Transportation

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The channel potential of natural local self-boosting (NLSB) effects in 16-layer 3D NAND flash memory was analyzed according to transient time. After a program pulse was applied to the selected word line (WL) of the inhibited string channel, the channel potential of the selected WL increased owing to NLSB. The channel potential of the selected WL, increased by NLSB, was analyzed as a function of the threshold voltage (V_th) of the adjacent cell and according to the change in time. The analysis confirmed that the channel potential value decreased gradually over time. However, it was confirmed that the rate at which the channel potential decreases was different depending on the V_th of the adjacent cell. The number of electrons in nitride is different for each V_th. These electrons affect the holes of the spacer and channel. The analysis also confirmed that the movement of electrons was caused by the difference in the hole concentration in the spacer and channel.

Original language	English
Article number	2909
Journal	Applied Sciences (Switzerland)
Volume	13
Issue number	5
DOIs	https://doi.org/10.3390/app13052909
State	Published - Mar 2023

Keywords

3D NAND flash memory
channel potential
inhibited string
natural local self-boosting (NLSB)
selected WL

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10.3390/app13052909

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title = "Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time",

abstract = "The channel potential of natural local self-boosting (NLSB) effects in 16-layer 3D NAND flash memory was analyzed according to transient time. After a program pulse was applied to the selected word line (WL) of the inhibited string channel, the channel potential of the selected WL increased owing to NLSB. The channel potential of the selected WL, increased by NLSB, was analyzed as a function of the threshold voltage (Vth) of the adjacent cell and according to the change in time. The analysis confirmed that the channel potential value decreased gradually over time. However, it was confirmed that the rate at which the channel potential decreases was different depending on the Vth of the adjacent cell. The number of electrons in nitride is different for each Vth. These electrons affect the holes of the spacer and channel. The analysis also confirmed that the movement of electrons was caused by the difference in the hole concentration in the spacer and channel.",

keywords = "3D NAND flash memory, channel potential, inhibited string, natural local self-boosting (NLSB), selected WL",

author = "Taeyoung Cho and Hyunju Kim and Myounggon Kang",

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language = "English",

volume = "13",

journal = "Applied Sciences (Switzerland)",

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T1 - Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time

AU - Cho, Taeyoung

AU - Kim, Hyunju

AU - Kang, Myounggon

PY - 2023/3

Y1 - 2023/3

N2 - The channel potential of natural local self-boosting (NLSB) effects in 16-layer 3D NAND flash memory was analyzed according to transient time. After a program pulse was applied to the selected word line (WL) of the inhibited string channel, the channel potential of the selected WL increased owing to NLSB. The channel potential of the selected WL, increased by NLSB, was analyzed as a function of the threshold voltage (Vth) of the adjacent cell and according to the change in time. The analysis confirmed that the channel potential value decreased gradually over time. However, it was confirmed that the rate at which the channel potential decreases was different depending on the Vth of the adjacent cell. The number of electrons in nitride is different for each Vth. These electrons affect the holes of the spacer and channel. The analysis also confirmed that the movement of electrons was caused by the difference in the hole concentration in the spacer and channel.

AB - The channel potential of natural local self-boosting (NLSB) effects in 16-layer 3D NAND flash memory was analyzed according to transient time. After a program pulse was applied to the selected word line (WL) of the inhibited string channel, the channel potential of the selected WL increased owing to NLSB. The channel potential of the selected WL, increased by NLSB, was analyzed as a function of the threshold voltage (Vth) of the adjacent cell and according to the change in time. The analysis confirmed that the channel potential value decreased gradually over time. However, it was confirmed that the rate at which the channel potential decreases was different depending on the Vth of the adjacent cell. The number of electrons in nitride is different for each Vth. These electrons affect the holes of the spacer and channel. The analysis also confirmed that the movement of electrons was caused by the difference in the hole concentration in the spacer and channel.

KW - 3D NAND flash memory

KW - channel potential

KW - inhibited string

KW - natural local self-boosting (NLSB)

KW - selected WL

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U2 - 10.3390/app13052909

DO - 10.3390/app13052909

M3 - Article

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SN - 2076-3417

VL - 13

JO - Applied Sciences (Switzerland)

JF - Applied Sciences (Switzerland)

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ER -

Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time

Abstract

Keywords

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