Interface modification for OTFTs using a statistical optimization method

Wan Shick Hong, Bonwon Koo, Innam Kang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Control parameters of the interface treatment and pentacene deposition were optimized to improve the field effect mobility of organic thin film transistors (OTFTs). A full factorial design of experimental methodology was applied to determine the individual effects of the process parameters and their mutual interactions. The field effect mobility of the pentacene layer increased from 0.01 to 0.3 cm2/(V s) after the optimization process. The resulting TFT showed an on/off current ratio of 2 × 106 and a threshold voltage of -0.3 V. The improved alignment of the pentacene molecules lead to the enhancement of the TFT performance.

Original languageEnglish
Pages (from-to)G247-G250
JournalElectrochemical and Solid-State Letters
Issue number11
StatePublished - 2004


Dive into the research topics of 'Interface modification for OTFTs using a statistical optimization method'. Together they form a unique fingerprint.

Cite this