Interface modification for OTFTs using a statistical optimization method

Wan Shick Hong; Bonwon Koo; Innam Kang

doi:10.1149/1.1803053

Interface modification for OTFTs using a statistical optimization method

Wan Shick Hong, Bonwon Koo, Innam Kang

Department of Materials Science and Engineering

Samsung

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Control parameters of the interface treatment and pentacene deposition were optimized to improve the field effect mobility of organic thin film transistors (OTFTs). A full factorial design of experimental methodology was applied to determine the individual effects of the process parameters and their mutual interactions. The field effect mobility of the pentacene layer increased from 0.01 to 0.3 cm²/(V s) after the optimization process. The resulting TFT showed an on/off current ratio of 2 × 10⁶ and a threshold voltage of -0.3 V. The improved alignment of the pentacene molecules lead to the enhancement of the TFT performance.

Original language	English
Pages (from-to)	G247-G250
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	11
DOIs	https://doi.org/10.1149/1.1803053
State	Published - 2004

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abstract = "Control parameters of the interface treatment and pentacene deposition were optimized to improve the field effect mobility of organic thin film transistors (OTFTs). A full factorial design of experimental methodology was applied to determine the individual effects of the process parameters and their mutual interactions. The field effect mobility of the pentacene layer increased from 0.01 to 0.3 cm2/(V s) after the optimization process. The resulting TFT showed an on/off current ratio of 2 × 106 and a threshold voltage of -0.3 V. The improved alignment of the pentacene molecules lead to the enhancement of the TFT performance.",

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AB - Control parameters of the interface treatment and pentacene deposition were optimized to improve the field effect mobility of organic thin film transistors (OTFTs). A full factorial design of experimental methodology was applied to determine the individual effects of the process parameters and their mutual interactions. The field effect mobility of the pentacene layer increased from 0.01 to 0.3 cm2/(V s) after the optimization process. The resulting TFT showed an on/off current ratio of 2 × 106 and a threshold voltage of -0.3 V. The improved alignment of the pentacene molecules lead to the enhancement of the TFT performance.

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Interface modification for OTFTs using a statistical optimization method

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