Interfacial Triggering of Conductive Filament Growth in Organic Flexible Memristor for High Reliability and Uniformity

Sin Hyung Lee; Hea Lim Park; Min Hoi Kim; Sujie Kang; Sin Doo Lee

doi:10.1021/acsami.9b10491

Interfacial Triggering of Conductive Filament Growth in Organic Flexible Memristor for High Reliability and Uniformity

Sin Hyung Lee, Hea Lim Park, Min Hoi Kim, Sujie Kang, Sin Doo Lee

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode-polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.

Original language	English
Pages (from-to)	30108-30115
Number of pages	8
Journal	ACS applied materials & interfaces
Volume	11
Issue number	33
DOIs	https://doi.org/10.1021/acsami.9b10491
State	Published - 21 Aug 2019

Keywords

Ostwald ripening
conductive filament
flexible memristor
high reliability
high uniformity
organic memristor
resistive switching

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10.1021/acsami.9b10491

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abstract = "We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode-polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.",

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author = "Lee, {Sin Hyung} and Park, {Hea Lim} and Kim, {Min Hoi} and Sujie Kang and Lee, {Sin Doo}",

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AU - Kang, Sujie

AU - Lee, Sin Doo

PY - 2019/8/21

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AB - We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode-polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.

KW - Ostwald ripening

KW - conductive filament

KW - flexible memristor

KW - high reliability

KW - high uniformity

KW - organic memristor

KW - resistive switching

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Interfacial Triggering of Conductive Filament Growth in Organic Flexible Memristor for High Reliability and Uniformity

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