Interfacial Triggering of Conductive Filament Growth in Organic Flexible Memristor for High Reliability and Uniformity

Sin Hyung Lee, Hea Lim Park, Min Hoi Kim, Sujie Kang, Sin Doo Lee

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode-polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.

Original languageEnglish
Pages (from-to)30108-30115
Number of pages8
JournalACS applied materials & interfaces
Volume11
Issue number33
DOIs
StatePublished - 21 Aug 2019

Keywords

  • Ostwald ripening
  • conductive filament
  • flexible memristor
  • high reliability
  • high uniformity
  • organic memristor
  • resistive switching

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