Internal efficiency of staggered InGaN/InGaN quantum-well light-emitting diodes

Seoung Hwan Park, Doyeol Ahn, Koo Bun-Hei, Kim Jong-Wook

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The internal efficiency of staggered 440-nm InGaN/InGaN/GaN quantum-well (QW) lightemitting diodes (LEDs) is investigated using the multiband effective mass theory. These results are compared with those for conventional 440-nm InGaN/GaN QW structures. The internal efficiency is shown to be increased significantly by the inclusion of the staggered layer. This is mainly due to the fact that the radiative recombination rate is largely enhanced due to a reduction in the internal field. The peak shift due to the screening electric field for a staggered QW structure is relatively smaller than that for a conventional QW structure.

Original languageEnglish
Pages (from-to)2464-2467
Number of pages4
JournalJournal of the Korean Physical Society
Issue number6
StatePublished - Jun 2009


  • GaN
  • InGaN
  • Internal efficiency
  • Light-emitting diode
  • Quantum-well
  • Staggered structure


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