Internal field engineering in CdZnO/MgZnO quantum well structures

Seoung Hwan Park; Doyeol Ahn

doi:10.1063/1.3090490

Internal field engineering in CdZnO/MgZnO quantum well structures

Seoung Hwan Park, Doyeol Ahn

School of Electrical and Computer Engineering

Catholic University of Daegu

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Electronic and optical properties of CdZnO/MgZnO quantum well (QW) structures with the depolarization of an internal field are investigated by using the non-Markovian gain model. The Mg composition is selected to give zero internal field for a given Cd composition. The Mg content to give zero internal field is found to increase with increasing Cd content. The peak gain is improved with increasing Cd composition in a range of Cd<0.07 because a quasi-Fermi-level separation rapidly increases with the Cd composition. However, it begins to decrease when the Cd composition exceeds 0.07.

Original language	English
Article number	083507
Journal	Applied Physics Letters
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.3090490
State	Published - 2009

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abstract = "Electronic and optical properties of CdZnO/MgZnO quantum well (QW) structures with the depolarization of an internal field are investigated by using the non-Markovian gain model. The Mg composition is selected to give zero internal field for a given Cd composition. The Mg content to give zero internal field is found to increase with increasing Cd content. The peak gain is improved with increasing Cd composition in a range of Cd<0.07 because a quasi-Fermi-level separation rapidly increases with the Cd composition. However, it begins to decrease when the Cd composition exceeds 0.07.",

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AB - Electronic and optical properties of CdZnO/MgZnO quantum well (QW) structures with the depolarization of an internal field are investigated by using the non-Markovian gain model. The Mg composition is selected to give zero internal field for a given Cd composition. The Mg content to give zero internal field is found to increase with increasing Cd content. The peak gain is improved with increasing Cd composition in a range of Cd<0.07 because a quasi-Fermi-level separation rapidly increases with the Cd composition. However, it begins to decrease when the Cd composition exceeds 0.07.

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Internal field engineering in CdZnO/MgZnO quantum well structures

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