Abstract
Intersubband (ISB) transition absorption properties of strain-compensated InGaN/InAlN quantum well (QW) structures grown on GaN substrate were investigated using an effective mass theory. The interband dipole moment of the strain-compensated InGaN/InAlN QW structure is shown to be comparable to that of the conventional GaN/AlN QW structure. However, the strain-compensated InGaN/InAlN QW structure shows much larger intersubband absorption coefficient than the conventional GaN/AlN QW structure. This is mainly due to the fact that the former shows much larger quasi-Fermi-level separation than the latter because the electron effective mass is reduced with the inclusion of Indium. As a result, the strain-compensated QW structures could be used as ISB photodetectors for telecommunication operating at 1.55 μm with a higher absorption coefficient and a reduced strain, compared to conventional GaN/AlN QW structures.
Original language | English |
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Pages (from-to) | 508-513 |
Number of pages | 6 |
Journal | Superlattices and Microstructures |
Volume | 100 |
DOIs | |
State | Published - 1 Dec 2016 |
Keywords
- GaN
- InAlN
- InGaN
- Intersubband
- Photodetector