@inproceedings{436a05d5ace04cf08db12b6d6e79db5c,
title = "Intersubband transition in p-type wurtzite GaN/AlGaN quantum well",
abstract = "The intersubband (ISB) transition of wurtzite (WZ) p-type GaN/AlGaN quantum well (QW) structures was investigated as a function of Al content in barrier using the multiband effective-mass theory. The peak wavelength of the TE-polarization absorption spectrum is rapidly redshifted with decreasing Al content in the barrier. The peak intensity of the TE-polarization absorption spectrum is shown to be similar to that of the TM-polarization absorption spectrum. We find that the peak wavelength of the TE-polarized absorption spectrum of 1.55 μm is possible even for the QW structure with a small Al content of x=0.7. We expect that a p-type WZ GaN/AlGaN heterostructure is attractive for a photodetector application for fiber-optic communications.",
keywords = "AlGaN, GaN, Intersubband, Photodetector, Quantum well",
author = "Park, {Seoung Hwan} and Hong, {Woo Pyo} and Kim, {Jong Jae} and Kim, {Bong Hwan} and Park, {Chan Yong} and Doyeol Ahn",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018 ; Conference date: 05-11-2018 Through 09-11-2018",
year = "2018",
month = dec,
day = "7",
doi = "10.1109/NUSOD.2018.8570227",
language = "English",
series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",
publisher = "IEEE Computer Society",
pages = "25--26",
editor = "Joachim Piprek and Djurisic, {Aleksandra B.}",
booktitle = "18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018",
address = "United States",
}