Intersubband transition in p-type wurtzite GaN/AlGaN quantum well

Seoung Hwan Park, Woo Pyo Hong, Jong Jae Kim, Bong Hwan Kim, Chan Yong Park, Doyeol Ahn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The intersubband (ISB) transition of wurtzite (WZ) p-type GaN/AlGaN quantum well (QW) structures was investigated as a function of Al content in barrier using the multiband effective-mass theory. The peak wavelength of the TE-polarization absorption spectrum is rapidly redshifted with decreasing Al content in the barrier. The peak intensity of the TE-polarization absorption spectrum is shown to be similar to that of the TM-polarization absorption spectrum. We find that the peak wavelength of the TE-polarized absorption spectrum of 1.55 μm is possible even for the QW structure with a small Al content of x=0.7. We expect that a p-type WZ GaN/AlGaN heterostructure is attractive for a photodetector application for fiber-optic communications.

Original languageEnglish
Title of host publication18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018
EditorsJoachim Piprek, Aleksandra B. Djurisic
PublisherIEEE Computer Society
Pages25-26
Number of pages2
ISBN (Electronic)9781538655993
DOIs
StatePublished - 7 Dec 2018
Event18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018 - Hong Kong, China
Duration: 5 Nov 20189 Nov 2018

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume2018-November
ISSN (Print)2158-3234

Conference

Conference18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018
Country/TerritoryChina
CityHong Kong
Period5/11/189/11/18

Keywords

  • AlGaN
  • GaN
  • Intersubband
  • Photodetector
  • Quantum well

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