Intersubband transitions in a δ-doped semiconductor with an applied electric field: Exact solutions

Intersubband optical absorption in a δ-doped semiconductor with an applied electric field is investigated theoretically with the intrasubband relaxations taken into account. Exact solutions of the Schrödinger equation for the ideal ssV-shaped potential well with the applied electric field are obtained analytically. It is predicted that wide range tuning of the intersubband absorption would be possible for a δ-doped semiconductor layer by controlling the amount of the planar doping. Calculated intersubband absorption spectra in a δ-doped semiconductor show redshifts with an applied electric field in contrast with intersubband electroabsorption in an ordinary quantum well, which shows blueshifts.