Abstract
Intersubband optical absorption in a δ-doped semiconductor with an applied electric field is investigated theoretically with the intrasubband relaxations taken into account. Exact solutions of the Schrödinger equation for the ideal ssV-shaped potential well with the applied electric field are obtained analytically. It is predicted that wide range tuning of the intersubband absorption would be possible for a δ-doped semiconductor layer by controlling the amount of the planar doping. Calculated intersubband absorption spectra in a δ-doped semiconductor show redshifts with an applied electric field in contrast with intersubband electroabsorption in an ordinary quantum well, which shows blueshifts.
Original language | English |
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Pages (from-to) | 7981-7985 |
Number of pages | 5 |
Journal | Physical Review B |
Volume | 48 |
Issue number | 11 |
DOIs | |
State | Published - 1993 |