Intraband relaxation time in wurtzite GaN/InAlN quantum-well

Seoung Hwan Park, Doyeol Ahn

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The intraband relaxation time in a wurtzite GaN/InAlN quantum well (QW) is investigated theoretically as a function of the compressive strain and well thickness. The results are compared with those obtained for an InGaAs/InGaAsP(1.13 eV) QW. It is found that the total linewidth broadening of GaN/InAlN QW is nearly independent of the compressive strain because the in-plane effective masses are not affected by the strain. On the other hand, the total linewidth of an InGaAs/InGaAsP QW significantly decreases with increasing strain. The linewidths for carrier-phonon scattering of a GaN/InAlN QW are much greater than those of an InGaAs/InGaAsP QW. The relaxation times for the electron-phonon and hole-phonon scatterings are estimated to be about 10 and 3 fs, respectively. Also, it is shown that the total linewidth of a GaN/InAlN QW is nearly constant irrespective of the well thickness.

Original languageEnglish
Pages (from-to)L815-L818
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number7 B
StatePublished - 1999


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