Introduction of Interfacial Load Polymeric Layer to Organic Flexible Memristor for Regulating Conductive Filament Growth

Hea Lim Park, Min Hoi Kim, Sin Hyung Lee

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

In flexible neuromorphic electronics, solution-processed organic memristors are important elements to perform memory functions. Despite considerable development for improving performances of organic memristors, the devices still exhibit the poor reliability and uniformity due to the stochastic characteristics of the conductive filament (CF) growth. Herein, the effective concept of introducing the interfacial load polymer (ILP) layers that control the CF growth in flexible organic memristors is demonstrated. In the flexible organic memristor, the ILP serves as an internal load resistor that regulates the CF growth in the electrolyte medium and the electron blocking layer, hence realizing self-rectifying characteristics. In particular, the ILP provides the self-compliance current of the device, which delicately limits the overgrowth of CFs. The flexible device delivers higher electrical performance (better reliability, uniformity, and the switching currents) than conventional devices without the ILP. Moreover, the device operates stably under repeated bending–straightening deformations. This unprecedented concept of achieving the capabilities of self-compliance current and self-rectifying property in a single memristor will provide a practical platform for constructing and realizing next-generation flexible neuromorphic systems.

Original languageEnglish
Article number2000582
JournalAdvanced Electronic Materials
Volume6
Issue number10
DOIs
StatePublished - 1 Oct 2020

Keywords

  • conductive filament growth
  • device reliability
  • organic memristors
  • self-regulation

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