TY - JOUR
T1 - Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance
AU - Ko, Hyungwoo
AU - Kim, Jongsu
AU - Kang, Myounggon
AU - Shin, Hyungcheol
N1 - Publisher Copyright:
© 2017 Elsevier Ltd
PY - 2017/10
Y1 - 2017/10
N2 - In this work, dual-k spacer structures are investigated using a variety of materials along the high-k spacer length in detail. It is known that not only the higher permittivity materials of high-k spacer boost the on-current but also lower permittivity materials of low-k spacer effectively reduce the off-current. By compared the results of other various single spacers and dual-k spacers, it is HfO2/Vacuum dual-k spacer that shows relatively higher ION, ION/IOFF, better immunity of short channel effects and outstanding device performances.
AB - In this work, dual-k spacer structures are investigated using a variety of materials along the high-k spacer length in detail. It is known that not only the higher permittivity materials of high-k spacer boost the on-current but also lower permittivity materials of low-k spacer effectively reduce the off-current. By compared the results of other various single spacers and dual-k spacers, it is HfO2/Vacuum dual-k spacer that shows relatively higher ION, ION/IOFF, better immunity of short channel effects and outstanding device performances.
KW - Dual-k spacer
KW - High-to-low propagation delay
KW - Intrinsic gate delay
KW - Inverter
KW - Parasitic capacitance
KW - Parasitic resistance
UR - http://www.scopus.com/inward/record.url?scp=85021761304&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2017.06.026
DO - 10.1016/j.sse.2017.06.026
M3 - Article
AN - SCOPUS:85021761304
SN - 0038-1101
VL - 136
SP - 68
EP - 74
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -