Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance

Hyungwoo Ko; Jongsu Kim; Myounggon Kang; Hyungcheol Shin

doi:10.1016/j.sse.2017.06.026

Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance

Hyungwoo Ko
, Jongsu Kim
, Myounggon Kang
, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

In this work, dual-k spacer structures are investigated using a variety of materials along the high-k spacer length in detail. It is known that not only the higher permittivity materials of high-k spacer boost the on-current but also lower permittivity materials of low-k spacer effectively reduce the off-current. By compared the results of other various single spacers and dual-k spacers, it is HfO₂/Vacuum dual-k spacer that shows relatively higher I_ON, I_ON/I_OFF, better immunity of short channel effects and outstanding device performances.

Original language	English
Pages (from-to)	68-74
Number of pages	7
Journal	Solid-State Electronics
Volume	136
DOIs	https://doi.org/10.1016/j.sse.2017.06.026
State	Published - Oct 2017

Keywords

Dual-k spacer
High-to-low propagation delay
Intrinsic gate delay
Inverter
Parasitic capacitance
Parasitic resistance

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10.1016/j.sse.2017.06.026

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@article{316a3e14abde4bf3818a6758b03f539f,

title = "Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance",

abstract = "In this work, dual-k spacer structures are investigated using a variety of materials along the high-k spacer length in detail. It is known that not only the higher permittivity materials of high-k spacer boost the on-current but also lower permittivity materials of low-k spacer effectively reduce the off-current. By compared the results of other various single spacers and dual-k spacers, it is HfO2/Vacuum dual-k spacer that shows relatively higher ION, ION/IOFF, better immunity of short channel effects and outstanding device performances.",

keywords = "Dual-k spacer, High-to-low propagation delay, Intrinsic gate delay, Inverter, Parasitic capacitance, Parasitic resistance",

author = "Hyungwoo Ko and Jongsu Kim and Myounggon Kang and Hyungcheol Shin",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

month = oct,

doi = "10.1016/j.sse.2017.06.026",

language = "English",

volume = "136",

pages = "68--74",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance

AU - Ko, Hyungwoo

AU - Kim, Jongsu

AU - Kang, Myounggon

AU - Shin, Hyungcheol

PY - 2017/10

Y1 - 2017/10

N2 - In this work, dual-k spacer structures are investigated using a variety of materials along the high-k spacer length in detail. It is known that not only the higher permittivity materials of high-k spacer boost the on-current but also lower permittivity materials of low-k spacer effectively reduce the off-current. By compared the results of other various single spacers and dual-k spacers, it is HfO2/Vacuum dual-k spacer that shows relatively higher ION, ION/IOFF, better immunity of short channel effects and outstanding device performances.

AB - In this work, dual-k spacer structures are investigated using a variety of materials along the high-k spacer length in detail. It is known that not only the higher permittivity materials of high-k spacer boost the on-current but also lower permittivity materials of low-k spacer effectively reduce the off-current. By compared the results of other various single spacers and dual-k spacers, it is HfO2/Vacuum dual-k spacer that shows relatively higher ION, ION/IOFF, better immunity of short channel effects and outstanding device performances.

KW - Dual-k spacer

KW - High-to-low propagation delay

KW - Intrinsic gate delay

KW - Inverter

KW - Parasitic capacitance

KW - Parasitic resistance

UR - https://www.scopus.com/pages/publications/85021761304

U2 - 10.1016/j.sse.2017.06.026

DO - 10.1016/j.sse.2017.06.026

M3 - Article

AN - SCOPUS:85021761304

SN - 0038-1101

VL - 136

SP - 68

EP - 74

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance

Abstract

Keywords

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