Investigation of inhibited channel potential of 3D NAND flash memory according to word‐line location

Sangwoo Han; Joungseok Jeong; Heesauk Jhon; Myounggon Kang

doi:10.3390/electronics9020268

Investigation of inhibited channel potential of 3D NAND flash memory according to word‐line location

Sangwoo Han, Joungseok Jeong, Heesauk Jhon, Myounggon Kang

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Natural local self‐boosting (NLSB) was analyzed according to the location of a selected word‐line (WL) where potential boosting occurs. When the same pattern occurred, it was found that the top cells (WL11 through WL15) and bottom cells (WL0 through WL4) have identically symmetrical potential boosting. In addition, in the region of the middle cells (WL6 through WL10), a slight change in the potential boosting was also almost the same. In the 3D NAND, where there was a dummy WL (DWL), the NLSB for the edge WL changed as the pattern of the DWL changed. The DWL did not affect the NLSB of the main cell, regardless of the pattern. Therefore, the high potential of the edge WL could reduce the potential difference between the main cell and the edge WL using the DWL.

Original language	English
Article number	268
Journal	Electronics (Switzerland)
Volume	9
Issue number	2
DOIs	https://doi.org/10.3390/electronics9020268
State	Published - Feb 2020

Keywords

3D NAND flash memory
Dummy word line (DWL)
Natural local self‐boosting (NLSB)
Word‐line (WL)

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10.3390/electronics9020268

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title = "Investigation of inhibited channel potential of 3D NAND flash memory according to word‐line location",

abstract = "Natural local self‐boosting (NLSB) was analyzed according to the location of a selected word‐line (WL) where potential boosting occurs. When the same pattern occurred, it was found that the top cells (WL11 through WL15) and bottom cells (WL0 through WL4) have identically symmetrical potential boosting. In addition, in the region of the middle cells (WL6 through WL10), a slight change in the potential boosting was also almost the same. In the 3D NAND, where there was a dummy WL (DWL), the NLSB for the edge WL changed as the pattern of the DWL changed. The DWL did not affect the NLSB of the main cell, regardless of the pattern. Therefore, the high potential of the edge WL could reduce the potential difference between the main cell and the edge WL using the DWL.",

keywords = "3D NAND flash memory, Dummy word line (DWL), Natural local self‐boosting (NLSB), Word‐line (WL)",

author = "Sangwoo Han and Joungseok Jeong and Heesauk Jhon and Myounggon Kang",

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language = "English",

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journal = "Electronics (Switzerland)",

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T1 - Investigation of inhibited channel potential of 3D NAND flash memory according to word‐line location

AU - Han, Sangwoo

AU - Jeong, Joungseok

AU - Jhon, Heesauk

AU - Kang, Myounggon

PY - 2020/2

Y1 - 2020/2

N2 - Natural local self‐boosting (NLSB) was analyzed according to the location of a selected word‐line (WL) where potential boosting occurs. When the same pattern occurred, it was found that the top cells (WL11 through WL15) and bottom cells (WL0 through WL4) have identically symmetrical potential boosting. In addition, in the region of the middle cells (WL6 through WL10), a slight change in the potential boosting was also almost the same. In the 3D NAND, where there was a dummy WL (DWL), the NLSB for the edge WL changed as the pattern of the DWL changed. The DWL did not affect the NLSB of the main cell, regardless of the pattern. Therefore, the high potential of the edge WL could reduce the potential difference between the main cell and the edge WL using the DWL.

AB - Natural local self‐boosting (NLSB) was analyzed according to the location of a selected word‐line (WL) where potential boosting occurs. When the same pattern occurred, it was found that the top cells (WL11 through WL15) and bottom cells (WL0 through WL4) have identically symmetrical potential boosting. In addition, in the region of the middle cells (WL6 through WL10), a slight change in the potential boosting was also almost the same. In the 3D NAND, where there was a dummy WL (DWL), the NLSB for the edge WL changed as the pattern of the DWL changed. The DWL did not affect the NLSB of the main cell, regardless of the pattern. Therefore, the high potential of the edge WL could reduce the potential difference between the main cell and the edge WL using the DWL.

KW - 3D NAND flash memory

KW - Dummy word line (DWL)

KW - Natural local self‐boosting (NLSB)

KW - Word‐line (WL)

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Investigation of inhibited channel potential of 3D NAND flash memory according to word‐line location

Abstract

Keywords

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