Investigation of Inhibited String Characteristics According to Dimple Structures in 3D NAND Flash Memory

Jesun Park; Myounggon Kang

doi:10.1109/LED.2025.3531354

Investigation of Inhibited String Characteristics According to Dimple Structures in 3D NAND Flash Memory

Jesun Park
, Myounggon Kang

School of Advanced Fusion Studies

University of Seoul

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this letter, we investigated the boosted channel potential (V_ch) in inhibited strings with dimple (concave and convex) structures and analyzed the program (PGM) disturbance caused by V_ch. In concave structures, the electric field (e-field) concentrated in the spacer (SP) region, resulting in a decrease in V_ch as the degree of concavity increases. In convex structures, the e-field concentrates in the center of the word line (WL) region, boosting V_ch as the degree of convexity increases. This occurs due to the dispersion or concentration of the PGM voltage applied to the WL. High V_ch in the selected WL increases the potential difference (1V_ch) between adjacent WLs. Due to structural characteristics, the lateral e-field (E_m) is largest in concave structures, whereas the vertical e-field (E_ox) dominates in convex structures. Consequently, PGM disturb characteristics caused by hot carrier injection (HCI) are significantly degraded in convex structures.

Original language	English
Pages (from-to)	409-411
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	46
Issue number	3
DOIs	https://doi.org/10.1109/LED.2025.3531354
State	Published - 2025

Keywords

3D NAND flash memory
HCI
channel potential
dimple
program disturb

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10.1109/LED.2025.3531354

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title = "Investigation of Inhibited String Characteristics According to Dimple Structures in 3D NAND Flash Memory",

abstract = "In this letter, we investigated the boosted channel potential (Vch) in inhibited strings with dimple (concave and convex) structures and analyzed the program (PGM) disturbance caused by Vch. In concave structures, the electric field (e-field) concentrated in the spacer (SP) region, resulting in a decrease in Vch as the degree of concavity increases. In convex structures, the e-field concentrates in the center of the word line (WL) region, boosting Vch as the degree of convexity increases. This occurs due to the dispersion or concentration of the PGM voltage applied to the WL. High Vch in the selected WL increases the potential difference (1Vch) between adjacent WLs. Due to structural characteristics, the lateral e-field (Em) is largest in concave structures, whereas the vertical e-field (Eox) dominates in convex structures. Consequently, PGM disturb characteristics caused by hot carrier injection (HCI) are significantly degraded in convex structures.",

keywords = "3D NAND flash memory, HCI, channel potential, dimple, program disturb",

author = "Jesun Park and Myounggon Kang",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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doi = "10.1109/LED.2025.3531354",

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volume = "46",

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journal = "IEEE Electron Device Letters",

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T1 - Investigation of Inhibited String Characteristics According to Dimple Structures in 3D NAND Flash Memory

AU - Park, Jesun

AU - Kang, Myounggon

PY - 2025

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N2 - In this letter, we investigated the boosted channel potential (Vch) in inhibited strings with dimple (concave and convex) structures and analyzed the program (PGM) disturbance caused by Vch. In concave structures, the electric field (e-field) concentrated in the spacer (SP) region, resulting in a decrease in Vch as the degree of concavity increases. In convex structures, the e-field concentrates in the center of the word line (WL) region, boosting Vch as the degree of convexity increases. This occurs due to the dispersion or concentration of the PGM voltage applied to the WL. High Vch in the selected WL increases the potential difference (1Vch) between adjacent WLs. Due to structural characteristics, the lateral e-field (Em) is largest in concave structures, whereas the vertical e-field (Eox) dominates in convex structures. Consequently, PGM disturb characteristics caused by hot carrier injection (HCI) are significantly degraded in convex structures.

AB - In this letter, we investigated the boosted channel potential (Vch) in inhibited strings with dimple (concave and convex) structures and analyzed the program (PGM) disturbance caused by Vch. In concave structures, the electric field (e-field) concentrated in the spacer (SP) region, resulting in a decrease in Vch as the degree of concavity increases. In convex structures, the e-field concentrates in the center of the word line (WL) region, boosting Vch as the degree of convexity increases. This occurs due to the dispersion or concentration of the PGM voltage applied to the WL. High Vch in the selected WL increases the potential difference (1Vch) between adjacent WLs. Due to structural characteristics, the lateral e-field (Em) is largest in concave structures, whereas the vertical e-field (Eox) dominates in convex structures. Consequently, PGM disturb characteristics caused by hot carrier injection (HCI) are significantly degraded in convex structures.

KW - 3D NAND flash memory

KW - HCI

KW - channel potential

KW - dimple

KW - program disturb

UR - https://www.scopus.com/pages/publications/85217521371

U2 - 10.1109/LED.2025.3531354

DO - 10.1109/LED.2025.3531354

M3 - Article

AN - SCOPUS:85217521371

SN - 0741-3106

VL - 46

SP - 409

EP - 411

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Investigation of Inhibited String Characteristics According to Dimple Structures in 3D NAND Flash Memory

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