Investigation of self boosting disturbance induced by channel coupling in 3D stacked NAND flash memory

Wandong Kim; Yoon Kim; Se Hwan Park; Joo Yun Seo; Do Bin Kim; Seung Hyun Kim; Byung Gook Park

doi:10.1109/ISDRS.2011.6135296

Investigation of self boosting disturbance induced by channel coupling in 3D stacked NAND flash memory

Wandong Kim, Yoon Kim, Se Hwan Park, Joo Yun Seo, Do Bin Kim, Seung Hyun Kim, Byung Gook Park

School of Electrical and Computer Engineering

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

As the needs for high density NAND flash memory have been dramatically increasing, the memory density has also increased by scaling down the technology node. As the scaling of NAND flash memory is accelerated, the short channel effect is more severe and further scaling down is faced with process limitations. So, various types of 3D stacked NAND flash memory has been introduced and reported for ultra-high-density data storage and Fig. 1 shows one of the previously reported 3D stacked NAND flash memory structures [1-3]. However, as the distance between layers is reduced, several channel coupling problems are emerging. In this paper, we investigate the self boosting disturbance induced by channel coupling between layers in the 3D stacked NAND flash memory.

Original language	English
Title of host publication	2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs	https://doi.org/10.1109/ISDRS.2011.6135296
State	Published - 2011
Event	2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States Duration: 7 Dec 2011 → 9 Dec 2011

Publication series

Name	2011 International Semiconductor Device Research Symposium, ISDRS 2011

Conference

Conference	2011 International Semiconductor Device Research Symposium, ISDRS 2011
Country/Territory	United States
City	College Park, MD
Period	7/12/11 → 9/12/11

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10.1109/ISDRS.2011.6135296

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Kim, W., Kim, Y., Park, S. H., Seo, J. Y., Kim, D. B., Kim, S. H., & Park, B. G. (2011). Investigation of self boosting disturbance induced by channel coupling in 3D stacked NAND flash memory. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 Article 6135296 (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135296

@inproceedings{9d8ae4efd9bd4be5a8bc6c3154ed01c3,

title = "Investigation of self boosting disturbance induced by channel coupling in 3D stacked NAND flash memory",

abstract = "As the needs for high density NAND flash memory have been dramatically increasing, the memory density has also increased by scaling down the technology node. As the scaling of NAND flash memory is accelerated, the short channel effect is more severe and further scaling down is faced with process limitations. So, various types of 3D stacked NAND flash memory has been introduced and reported for ultra-high-density data storage and Fig. 1 shows one of the previously reported 3D stacked NAND flash memory structures [1-3]. However, as the distance between layers is reduced, several channel coupling problems are emerging. In this paper, we investigate the self boosting disturbance induced by channel coupling between layers in the 3D stacked NAND flash memory.",

author = "Wandong Kim and Yoon Kim and Park, {Se Hwan} and Seo, {Joo Yun} and Kim, {Do Bin} and Kim, {Seung Hyun} and Park, {Byung Gook}",

year = "2011",

doi = "10.1109/ISDRS.2011.6135296",

language = "English",

isbn = "9781457717550",

series = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",

booktitle = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",

note = "2011 International Semiconductor Device Research Symposium, ISDRS 2011 ; Conference date: 07-12-2011 Through 09-12-2011",

}

Kim, W, Kim, Y, Park, SH, Seo, JY, Kim, DB, Kim, SH & Park, BG 2011, Investigation of self boosting disturbance induced by channel coupling in 3D stacked NAND flash memory. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135296, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 7/12/11. https://doi.org/10.1109/ISDRS.2011.6135296

Investigation of self boosting disturbance induced by channel coupling in 3D stacked NAND flash memory. / Kim, Wandong; Kim, Yoon; Park, Se Hwan et al.
2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135296 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kim, Wandong

AU - Kim, Yoon

AU - Park, Se Hwan

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AU - Kim, Do Bin

AU - Kim, Seung Hyun

AU - Park, Byung Gook

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N2 - As the needs for high density NAND flash memory have been dramatically increasing, the memory density has also increased by scaling down the technology node. As the scaling of NAND flash memory is accelerated, the short channel effect is more severe and further scaling down is faced with process limitations. So, various types of 3D stacked NAND flash memory has been introduced and reported for ultra-high-density data storage and Fig. 1 shows one of the previously reported 3D stacked NAND flash memory structures [1-3]. However, as the distance between layers is reduced, several channel coupling problems are emerging. In this paper, we investigate the self boosting disturbance induced by channel coupling between layers in the 3D stacked NAND flash memory.

AB - As the needs for high density NAND flash memory have been dramatically increasing, the memory density has also increased by scaling down the technology node. As the scaling of NAND flash memory is accelerated, the short channel effect is more severe and further scaling down is faced with process limitations. So, various types of 3D stacked NAND flash memory has been introduced and reported for ultra-high-density data storage and Fig. 1 shows one of the previously reported 3D stacked NAND flash memory structures [1-3]. However, as the distance between layers is reduced, several channel coupling problems are emerging. In this paper, we investigate the self boosting disturbance induced by channel coupling between layers in the 3D stacked NAND flash memory.

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SN - 9781457717550

T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

T2 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

Y2 - 7 December 2011 through 9 December 2011

ER -

Investigation of self boosting disturbance induced by channel coupling in 3D stacked NAND flash memory

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