Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency region

Jongwook Jeon; Yoon Kim; Myounggon Kang

doi:10.1088/0268-1242/31/6/065004

Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency region

Jongwook Jeon, Yoon Kim, Myounggon Kang

Samsung

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this paper, we investigated the induced gate current noise of nanoscale N/PMOS devices. To analyze the induced gate noise, the induced gate current noise source model was analytically derived. By using the proposed model, the induced gate noise source was compared with other noise sources, and its impact on noise parameters was also analyzed in long-channel and nanoscale N/PMOS devices in the very high frequency region (>100 GHz). The results showed that the induced gate noise of sub-40 nm CMOS technology is negligible, even in the design of very high frequency circuits.

Original language	English
Article number	065004
Journal	Semiconductor Science and Technology
Volume	31
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/31/6/065004
State	Published - 14 Apr 2016

Keywords

high-frequency noise
induced gate current noise
nanoscale MOSFET
noise modeling

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@article{2fbd5a1ebfe7447d8c14a1738d8f9bcc,

title = "Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency region",

abstract = "In this paper, we investigated the induced gate current noise of nanoscale N/PMOS devices. To analyze the induced gate noise, the induced gate current noise source model was analytically derived. By using the proposed model, the induced gate noise source was compared with other noise sources, and its impact on noise parameters was also analyzed in long-channel and nanoscale N/PMOS devices in the very high frequency region (>100 GHz). The results showed that the induced gate noise of sub-40 nm CMOS technology is negligible, even in the design of very high frequency circuits.",

keywords = "high-frequency noise, induced gate current noise, nanoscale MOSFET, noise modeling",

author = "Jongwook Jeon and Yoon Kim and Myounggon Kang",

note = "Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

month = apr,

day = "14",

doi = "10.1088/0268-1242/31/6/065004",

language = "English",

volume = "31",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency region

AU - Jeon, Jongwook

AU - Kim, Yoon

AU - Kang, Myounggon

PY - 2016/4/14

Y1 - 2016/4/14

N2 - In this paper, we investigated the induced gate current noise of nanoscale N/PMOS devices. To analyze the induced gate noise, the induced gate current noise source model was analytically derived. By using the proposed model, the induced gate noise source was compared with other noise sources, and its impact on noise parameters was also analyzed in long-channel and nanoscale N/PMOS devices in the very high frequency region (>100 GHz). The results showed that the induced gate noise of sub-40 nm CMOS technology is negligible, even in the design of very high frequency circuits.

AB - In this paper, we investigated the induced gate current noise of nanoscale N/PMOS devices. To analyze the induced gate noise, the induced gate current noise source model was analytically derived. By using the proposed model, the induced gate noise source was compared with other noise sources, and its impact on noise parameters was also analyzed in long-channel and nanoscale N/PMOS devices in the very high frequency region (>100 GHz). The results showed that the induced gate noise of sub-40 nm CMOS technology is negligible, even in the design of very high frequency circuits.

KW - high-frequency noise

KW - induced gate current noise

KW - nanoscale MOSFET

KW - noise modeling

UR - http://www.scopus.com/inward/record.url?scp=84973321111&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/31/6/065004

DO - 10.1088/0268-1242/31/6/065004

M3 - Article

AN - SCOPUS:84973321111

SN - 0268-1242

VL - 31

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

M1 - 065004

ER -

Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency region

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