Ion scattering spectroscopy study of Si(001)c(4 x 4)-C surface reconstruction

J. Y. Park; J. H. Seo; J. Y. Kim; C. N. Whang; S. S. Kim; D. S. Choi; K. H. Chae

Ion scattering spectroscopy study of Si(001)c(4 x 4)-C surface reconstruction

J. Y. Park, J. H. Seo, J. Y. Kim, C. N. Whang, S. S. Kim, D. S. Choi, K. H. Chae

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Reconstructed Si(001)c(4 x 4)-C surface has been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). When 100L ethylene (C ₂H₄) was exposed on Si(001)-(2 x 1) surface at 700°C, Si(001) dimer structures were changed by induced carbon (C) atoms. The experimental CAICISS spectra and simulation results reveal that the reconstructed Si(001)c(4 x 4)-C surface shows good agreement with the missing dimer model, rather than the Si-C heterodimer model, and adsorbed C atoms influence only the reconstructed vertical plane of Si(001) surface. On comparing the azimuthal-scan curves for 100L C/Si(001) with those for clean Si(001), it can be suggested that C atoms occupy the fourth subsurface layer of Si(001) directly below the HB (bridge) site. These results are new evidence supporting the previous studies based on the C incorporation into Si(001) surface with missing dimers and the substitution of the fourth Si layers.

Original language	English
Pages (from-to)	614-618
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	45
Issue number	3
State	Published - Sep 2004

Keywords

Carbon
Low-energy ion scattering (LEIS)
Reconstruction
Silicon
Surface structure

Cite this

@article{6da4c76b619f44cbba2f6450a21613c1,

title = "Ion scattering spectroscopy study of Si(001)c(4 x 4)-C surface reconstruction",

abstract = "Reconstructed Si(001)c(4 x 4)-C surface has been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). When 100L ethylene (C 2H4) was exposed on Si(001)-(2 x 1) surface at 700°C, Si(001) dimer structures were changed by induced carbon (C) atoms. The experimental CAICISS spectra and simulation results reveal that the reconstructed Si(001)c(4 x 4)-C surface shows good agreement with the missing dimer model, rather than the Si-C heterodimer model, and adsorbed C atoms influence only the reconstructed vertical plane of Si(001) surface. On comparing the azimuthal-scan curves for 100L C/Si(001) with those for clean Si(001), it can be suggested that C atoms occupy the fourth subsurface layer of Si(001) directly below the HB (bridge) site. These results are new evidence supporting the previous studies based on the C incorporation into Si(001) surface with missing dimers and the substitution of the fourth Si layers.",

keywords = "Carbon, Low-energy ion scattering (LEIS), Reconstruction, Silicon, Surface structure",

author = "Park, {J. Y.} and Seo, {J. H.} and Kim, {J. Y.} and Whang, {C. N.} and Kim, {S. S.} and Choi, {D. S.} and Chae, {K. H.}",

year = "2004",

month = sep,

language = "English",

volume = "45",

pages = "614--618",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "3",

}

TY - JOUR

T1 - Ion scattering spectroscopy study of Si(001)c(4 x 4)-C surface reconstruction

AU - Park, J. Y.

AU - Seo, J. H.

AU - Kim, J. Y.

AU - Whang, C. N.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Chae, K. H.

PY - 2004/9

Y1 - 2004/9

N2 - Reconstructed Si(001)c(4 x 4)-C surface has been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). When 100L ethylene (C 2H4) was exposed on Si(001)-(2 x 1) surface at 700°C, Si(001) dimer structures were changed by induced carbon (C) atoms. The experimental CAICISS spectra and simulation results reveal that the reconstructed Si(001)c(4 x 4)-C surface shows good agreement with the missing dimer model, rather than the Si-C heterodimer model, and adsorbed C atoms influence only the reconstructed vertical plane of Si(001) surface. On comparing the azimuthal-scan curves for 100L C/Si(001) with those for clean Si(001), it can be suggested that C atoms occupy the fourth subsurface layer of Si(001) directly below the HB (bridge) site. These results are new evidence supporting the previous studies based on the C incorporation into Si(001) surface with missing dimers and the substitution of the fourth Si layers.

AB - Reconstructed Si(001)c(4 x 4)-C surface has been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). When 100L ethylene (C 2H4) was exposed on Si(001)-(2 x 1) surface at 700°C, Si(001) dimer structures were changed by induced carbon (C) atoms. The experimental CAICISS spectra and simulation results reveal that the reconstructed Si(001)c(4 x 4)-C surface shows good agreement with the missing dimer model, rather than the Si-C heterodimer model, and adsorbed C atoms influence only the reconstructed vertical plane of Si(001) surface. On comparing the azimuthal-scan curves for 100L C/Si(001) with those for clean Si(001), it can be suggested that C atoms occupy the fourth subsurface layer of Si(001) directly below the HB (bridge) site. These results are new evidence supporting the previous studies based on the C incorporation into Si(001) surface with missing dimers and the substitution of the fourth Si layers.

KW - Carbon

KW - Low-energy ion scattering (LEIS)

KW - Reconstruction

KW - Silicon

KW - Surface structure

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M3 - Article

AN - SCOPUS:6344223560

SN - 0374-4884

VL - 45

SP - 614

EP - 618

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Ion scattering spectroscopy study of Si(001)c(4 x 4)-C surface reconstruction

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Keywords

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