Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays

Jongman Kim; Wan Shick Hong; Sunghyun Lee; Do Young Kim; Ji Sim Jung; Jang Yeon Kwon; Takashi Noguchi

Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays

Jongman Kim, Wan Shick Hong, Sunghyun Lee, Do Young Kim, Ji Sim Jung, Jang Yeon Kwon, Takashi Noguchi

Department of Materials Science and Engineering

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

An ion shower doping technique was performed to form source-drain contacts for polysilicon TFTs on polyethersulfone (PES) substrates. The doped layer was subsequently annealed with an excimer laser to activate the dopant atoms electrically. The polysilicon films on the PES substrate showed much higher sheet resistance than those on a glass substrate when the two substrates were processed at the identical doping and activation conditions. Also, the plastic substrates heated up and caused film failure under prolonged exposure to the ion shower. The doping time and the resulting ion dose could be increased by reducing the RF power and allowing intervals for relaxation. A sheet resistance value as low as 300 ohms/sq. were obtained, which was low enough for a good ohmic contact.

Original language	English
Pages	80-86
Number of pages	7
State	Published - 2005
Event	Thin Film Transistor Technologies VII - Proceedings of the International Symposium - Honolulu, HI, United States Duration: 4 Oct 2004 → 6 Oct 2004

Conference

Conference	Thin Film Transistor Technologies VII - Proceedings of the International Symposium
Country/Territory	United States
City	Honolulu, HI
Period	4/10/04 → 6/10/04

Cite this

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title = "Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays",

abstract = "An ion shower doping technique was performed to form source-drain contacts for polysilicon TFTs on polyethersulfone (PES) substrates. The doped layer was subsequently annealed with an excimer laser to activate the dopant atoms electrically. The polysilicon films on the PES substrate showed much higher sheet resistance than those on a glass substrate when the two substrates were processed at the identical doping and activation conditions. Also, the plastic substrates heated up and caused film failure under prolonged exposure to the ion shower. The doping time and the resulting ion dose could be increased by reducing the RF power and allowing intervals for relaxation. A sheet resistance value as low as 300 ohms/sq. were obtained, which was low enough for a good ohmic contact.",

author = "Jongman Kim and Hong, {Wan Shick} and Sunghyun Lee and Kim, {Do Young} and Jung, {Ji Sim} and Kwon, {Jang Yeon} and Takashi Noguchi",

year = "2005",

language = "English",

pages = "80--86",

note = "Thin Film Transistor Technologies VII - Proceedings of the International Symposium ; Conference date: 04-10-2004 Through 06-10-2004",

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TY - CONF

T1 - Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays

AU - Kim, Jongman

AU - Hong, Wan Shick

AU - Lee, Sunghyun

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Kwon, Jang Yeon

AU - Noguchi, Takashi

PY - 2005

Y1 - 2005

N2 - An ion shower doping technique was performed to form source-drain contacts for polysilicon TFTs on polyethersulfone (PES) substrates. The doped layer was subsequently annealed with an excimer laser to activate the dopant atoms electrically. The polysilicon films on the PES substrate showed much higher sheet resistance than those on a glass substrate when the two substrates were processed at the identical doping and activation conditions. Also, the plastic substrates heated up and caused film failure under prolonged exposure to the ion shower. The doping time and the resulting ion dose could be increased by reducing the RF power and allowing intervals for relaxation. A sheet resistance value as low as 300 ohms/sq. were obtained, which was low enough for a good ohmic contact.

AB - An ion shower doping technique was performed to form source-drain contacts for polysilicon TFTs on polyethersulfone (PES) substrates. The doped layer was subsequently annealed with an excimer laser to activate the dopant atoms electrically. The polysilicon films on the PES substrate showed much higher sheet resistance than those on a glass substrate when the two substrates were processed at the identical doping and activation conditions. Also, the plastic substrates heated up and caused film failure under prolonged exposure to the ion shower. The doping time and the resulting ion dose could be increased by reducing the RF power and allowing intervals for relaxation. A sheet resistance value as low as 300 ohms/sq. were obtained, which was low enough for a good ohmic contact.

UR - http://www.scopus.com/inward/record.url?scp=28844480199&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:28844480199

SP - 80

EP - 86

T2 - Thin Film Transistor Technologies VII - Proceedings of the International Symposium

Y2 - 4 October 2004 through 6 October 2004

ER -

Ion shower doping of polysilicon films on plastic substrates for flexible TFT arrays

Abstract

Conference

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