Abstract
A gallium-doped ZnO (GZO) layer was investigated and compared with a conventional indium-tin-oxide (ITO) layer for use as a cathode in an inverted polymer solar cell based on poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C 61 butyric acid methyl ester (PCBM) bulk heterojunctions (BHJ). By modifying the GZO cathode with a ZnO thin layer, a high power conversion efficiency (3.4%) comparable to that of an inverted solar cell employing the same P3HT:PCBM BHJ photoactive layer with a conventional ITO/ZnO cathode was achieved. This result indicates that GZO is a transparent electrode material that can potentially be used to replace high-cost ITO.
| Original language | English |
|---|---|
| Pages (from-to) | 1610-1614 |
| Number of pages | 5 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 95 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 2011 |
Keywords
- Ga-doped ZnO
- Inverted polymer solar cell
- ITO-free
- Power conversion efficiency
- Transparent conducting oxide